FGPF30N45TTU Fairchild Semiconductor, FGPF30N45TTU Datasheet

Page 1

... R (IGBT) Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FGPF30N45T Rev. A General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applica- = 30A C tions where low conduction and switching losses are essential. ...

Page 2

... Package Marking and Ordering Information Device Marking Device FGPF30N45T FGPF30N45TTU For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics BV Collector to Emitter Breakdown Voltage V CES ∆BV Temperature Coefficient of Breakdown CES ∆T ...

Page 3

Typical Performance Characteristics Figure 1. Typical Output Characteristics 120 20V 12V Collector-Emitter Voltage, V Figure 3. Typical Saturation Voltage Characteristics 120 Common Emitter V = 15V ...

Page 4

Typical Performance Characteristics Figure 7. Saturation Voltage vs 20A 4 30A I = 10A Gate-Emitter Voltage, V Figure 9. Gate charge Characteristics 15 Common Emitter ...

Page 5

Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 200 Common Emitter Ω 15V 100 125 Collector ...

Page 6

Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 ±0.10 0.35 2.54TYP [2.54 ±0.20 ] 9.40 FGPF30N45T Rev. A TO-220F ±0.20 ±0.10 ø3.18 (7.00) (1.00x45°) #1 2.54TYP [2.54 ±0.20 ] ±0.20 6 2.54 ±0.20 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters ...

Page 7

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ ...