IKW03N120H2 Infineon Technologies, IKW03N120H2 Datasheet - Page 8

• Manufacturer Part Number: IKW03N120H2
• Description: IGBT 1200V 9.6A 62.5W TO247-3
• Manufacturer: Infineon Technologies

Specifications of IKW03N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 9.6A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 3A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 62.5W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 9.6 A
• Ic(max) @ 100°: 3.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Power Semiconductors
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E )
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E )
CE
GE
1.0mJ
0.5mJ
0.0mJ
0.5mJ
0.4mJ
0.3mJ
0.2mJ
0.1mJ
= 800V, V
= +15V/0V, I
0A
1
due to diode recovery.
1
due to diode recovery.
T
) E
) E
25°C
j
I
,
C
on
on
JUNCTION TEMPERATURE
,
and E
and E
COLLECTOR CURRENT
GE
C
= +15V/0V, R
j
CE
= 150 C,
= 3A, R
ts
ts
2A
80°C
include losses
= 800V,
include losses
G
= 82 ,
125°C
G
4A
= 82 ,
150°C
E
E
E
ts
on
off
E
E
E
1
1
ts
off
on
1
1
8
Figure 16. Typical turn off switching energy
loss for soft switching
(dynamic test circuit in Fig. E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E )
CE
0.16mJ
0.12mJ
0.08mJ
0.04mJ
0.00mJ
0.7mJ
0.6mJ
0.5mJ
0.4mJ
0.3mJ
0.2mJ
= 800V, V
0V/us
0
E
I
1
due to diode recovery.
E
C
) E
on
=1A, T
dv/dt, VOLTAGE SLOPE
off
1
on
50
R
GE
1000V/us
and E
G
J
=150°C
,
= +15V/0V, I
j
GATE RESISTOR
= 150 C,
I
C
ts
=1A, T
100
include losses
I
IKW03N120H2
C
=3A, T
IKP03N120H2
J
2000V/us
=25°C
150
J
=150°C
C
I
C
Rev. 2.5 Sept. 08
= 3A,
=3A, T
200
3000V/us
J
=25°C
250
E
ts
1