IKW03N120H2 Infineon Technologies, IKW03N120H2 Datasheet - Page 11

• Manufacturer Part Number: IKW03N120H2
• Description: IGBT 1200V 9.6A 62.5W TO247-3
• Manufacturer: Infineon Technologies

Specifications of IKW03N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 9.6A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 3A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 62.5W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 9.6 A
• Ic(max) @ 100°: 3.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Power Semiconductors
16A
14A
12A
10A
4A
2A
0A
8A
0O hm
0V
Figure 25. Typical reverse recovery
current as a function of diode current
slope
(V
Dynamic test circuit in Figure E)
Figure 27. Typical diode forward current
as a function of forward voltage
R
=800V, I
T
J
=25°C
V
R
100O hm
F
G
1V
,
,
F
FORWARD VOLTAGE
=3A,
GATE RESISTANCE
T
J
=150°C
T
J
=150°C
200O hm
2V
T
J
=25°C
300O hm
3V
11
3.0V
2.5V
2.0V
1.5V
1.0V
-1000A/us
-1200A/us
-1400A/us
-1600A/us
-1800A/us
-600A/us
-800A/us
Figure 26. Typical diode peak rate of fall
of reverse recovery current as a
function of diode current slope
(V
Dynamic test circuit in Figure E)
Figure 28. Typical diode forward
voltage as a function of junction
temperature
I
I
I
F
-50°C
F
F
R
0Ohm
=4A
=2A
=1A
=800V, I
T
J
,
R
JUNCTION TEMPERATURE
0°C
G
,
F
=3A,
GATE RESISTANCE
100Ohm
50°C
IKW03N120H2
IKP03N120H2
100°C
200Ohm
Rev. 2.5 Sept. 08
T
J
T
=150°C
J
150°C
=25°C
300Ohm