IKW03N120H2 Infineon Technologies, IKW03N120H2 Datasheet - Page 13
IKW03N120H2
Manufacturer Part Number
IKW03N120H2
Description
IGBT 1200V 9.6A 62.5W TO247-3
Manufacturer
Infineon Technologies
Datasheet
1.IKW03N120H2.pdf
(15 pages)
Specifications of IKW03N120H2
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 3A
Current - Collector (ic) (max)
9.6A
Power - Max
62.5W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
3A
Collector Emitter Voltage Vces
2.8V
Power Dissipation Max
62.5W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
HighSpeed2 30-100 kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
9.6 A
Ic(max) @ 100°
3.9 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IKW03N120H2
Manufacturer:
INFINEON
Quantity:
12 500
Power Semiconductors
16.25
15.70
13.10
19.80
20.82
1.68
4.90
2.27
1.85
1.07
1.90
1.90
2.87
2.87
0.55
1.05
3.68
4.17
3.50
5.49
6.04
MIN
5.44
PG-TO247-3
3
MAX
21.10
17.65
16.03
14.15
20.31
1.33
1.35
5.16
2.53
2.11
2.41
2.16
3.38
3.13
0.68
5.10
2.60
4.47
3.70
6.00
6.30
13
0.193
0.089
0.073
0.042
0.075
0.075
0.113
0.113
0.022
0.820
0.640
0.041
0.618
0.516
0.145
0.066
0.780
0.164
0.138
0.216
0.238
MIN
M
M
0.214
3
0.203
0.099
0.083
0.052
0.095
0.085
0.133
0.123
0.027
0.831
0.695
0.053
0.631
0.557
0.201
0.102
0.799
0.176
0.146
0.236
0.248
MAX
IKW03N120H2
0
IKP03N120H2
Z8B00003327
17-12-2007
03
5 5
Rev. 2.5 Sept. 08
0
7.5mm