IKW03N120H2 Infineon Technologies, IKW03N120H2 Datasheet - Page 4

• Manufacturer Part Number: IKW03N120H2
• Description: IGBT 1200V 9.6A 62.5W TO247-3
• Manufacturer: Infineon Technologies

Specifications of IKW03N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 9.6A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 3A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 62.5W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 9.6 A
• Ic(max) @ 100°: 3.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Parameter
IGBT Characteristic
Turn-off energy
Power Semiconductors
Switching Energy ZVT, Inductive Load
E
Symbol
o f f
V
I
V
R
C
T
T
C
j
j
C C
G E
G
r
= 3 A ,
= 25 C
= 150 C
2 )
= 8 2 ,
4
= 80 0 V,
=15V/0V,
= 4n F
Conditions
min.
-
-
IKW03N120H2
IKP03N120H2
Value
0.05
0.09
typ.
Rev. 2.5 Sept. 08
max.
-
-
Unit
mJ