IKW03N120H2 Infineon Technologies, IKW03N120H2 Datasheet - Page 3
IKW03N120H2
Manufacturer Part Number
IKW03N120H2
Description
IGBT 1200V 9.6A 62.5W TO247-3
Manufacturer
Infineon Technologies
Datasheet
1.IKW03N120H2.pdf
(15 pages)
Specifications of IKW03N120H2
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 3A
Current - Collector (ic) (max)
9.6A
Power - Max
62.5W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
3A
Collector Emitter Voltage Vces
2.8V
Power Dissipation Max
62.5W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
HighSpeed2 30-100 kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
9.6 A
Ic(max) @ 100°
3.9 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IKW03N120H2
Manufacturer:
INFINEON
Quantity:
12 500
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during t
2)
3)
Power Semiconductors
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E
Commutation diode from device IKP03N120H2
b
b
t
t
t
t
E
E
E
t
Q
I
d i
d i
t
t
t
t
E
E
E
t
Q
I
d i
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
r r m
d ( o n )
r
d ( o f f )
f
r r
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
F
r r
F
r r
/d t
/d t
/ d t
/ d t
j
j
=25 C
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
R
T
V
I
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
R
C
j
j
j
j
C C
G E
R
C C
G E
R
G
G
G
G
= 25 C ,
= 25 C ,
= 150 C
= 3 A ,
= 150 C
2 )
2 )
2 )
2 )
= 80 0 V , I
= 80 0 V , I
= 8 2 ,
= 8 2
= 8 2 ,
= 8 2
3
= 80 0 V, I
=15V/0V,
= 80 0 V,
=15V/0V,
=1 80nH,
=1 80nH,
=40pF
=40pF
Conditions
Conditions
F
F
= 3 A ,
= 3 A ,
C
3)
3)
= 3 A ,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKW03N120H2
IKP03N120H2
Value
Value
1180
0.14
0.15
0.29
0.23
10.3
0.22
0.26
0.48
0.51
typ.
typ.
281
993
340
125
829
540
9.2
5.2
9.4
6.7
29
42
63
12
Rev. 2.5 Sept. 08
max.
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
mJ
ns
µC
A
A/ s
Unit
ns
mJ
ns
µC
A
A/ s