IKW03N120H2 Infineon Technologies, IKW03N120H2 Datasheet - Page 6

• Manufacturer Part Number: IKW03N120H2
• Description: IGBT 1200V 9.6A 62.5W TO247-3
• Manufacturer: Infineon Technologies

Specifications of IKW03N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 9.6A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 3A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 62.5W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 9.6 A
• Ic(max) @ 100°: 3.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Power Semiconductors
Figure 7. Typical transfer characteristics
(V
Figure 5. Typical output characteristics
(T
10A
12A
10A
CE
8A
6A
4A
2A
0A
8A
6A
4A
2A
0A
j
3V
0V
= 25 C)
= 20V)
V
CE
V
,
V
GE
COLLECTOR
GE
1V
=15V
,
T
T
12V
10V
j
GATE
=+25°C
8V
6V
j
=+150°C
5V
-
2V
EMITTER VOLTAGE
-
EMITTER VOLTAGE
7V
3V
4V
9V
5V
6
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
Figure 6. Typical output characteristics
(T
10A
GE
3V
2V
1V
0V
9A
8A
7A
6A
5A
4A
3A
2A
1A
0A
-50°C
j
0V
= 150 C)
= 15V)
V
CE
,
T
V
COLLECTOR
j
GE
,
1V
=15V
JUNCTION TEMPERATURE
0°C
12V
10V
8V
6V
2V
50°C
-
IKW03N120H2
EMITTER VOLTAGE
IKP03N120H2
3V
100°C
Rev. 2.5 Sept. 08
4V
I
C
I
C
150°C
=1.5A
I
C
=3A
=6A
5V