IKB20N60T Infineon Technologies, IKB20N60T Datasheet - Page 9

• Manufacturer Part Number: IKB20N60T
• Description: IGBT 600V 40A 166W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKB20N60T

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 166W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 166W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 21. IGBT transient thermal resistance
Figure 23. Typical reverse recovery time as
10
10
250ns
200ns
150ns
100ns
50ns
-1
-2
0ns
K/W
K/W
600A/µs
1µs
D =0.5
0.05
di
0.1
0.2
( D = t
a function of diode current slope
( V
Dynamic test circuit in Figure E)
F
/dt ,
R
10µs 100µs 1ms
=400V, I
t
p
DIODE CURRENT SLOPE
single pulse
P
,
/ T )
0.01
0.02
PULSE WIDTH
900A/µs
F
=20A,
R
0.18715
0.31990
0.30709
0.07041
R , ( K / W )
1
C
1
=
1
1200A/µs
/R
T
10ms 100ms
1
J
T
=175°C
C
J
6.925*10
1.085*10
6.791*10
9.59*10
2
=25°C
=
, ( s )
2
/R
R
2
-5
2
-2
-2
-4
9
TrenchStop
Figure 22. Diode transient thermal
Figure 24. Typical reverse recovery charge
10
10
10
1.8µC
1.6µC
1.4µC
1.2µC
1.0µC
0.8µC
0.6µC
0.4µC
0.2µC
-1
-2
0
K/W
K/W
K/W
®
600A/µs
1µs
Series
D =0.5
di
impedance as a function of pulse
width
( D = t
as a function of diode current
slope
( V
Dynamic test circuit in Figure E)
0.1
0.2
F
/dt ,
R
10µs 100µs
= 400V, I
P
/ T )
t
DIODE CURRENT SLOPE
P
single pulse
,
0.01
0.02
PULSE WIDTH
0.05
900A/µs
F
= 20A,
IKB20N60T
R
0.13483
0.58146
0.44456
0.33997
R , ( K / W )
1
C
1ms
1
=
Rev. 2.4 Oct. 07
1
/R
1200A/µs
1
10ms 100ms
T
C
T
J
9.207*10
1.821*10
1.47*10
1.254*10
2
=175°C
J
=
=25°C
, ( s )
2
/R
R
2
-3
2
-2
-2
-4
p
6