IKB20N60T Infineon Technologies, IKB20N60T Datasheet
IKB20N60T
Specifications of IKB20N60T
Available stocks
Related parts for IKB20N60T
IKB20N60T Summary of contents
Page 1
... Fieldstop technology CE(sat) 1 for target applications http://www.infineon.com/igbt/ T Marking CE(sat),Tj=25°C j,max 1.5V K20T60 175 C Symbol V I jmax C I jmax 600V, T 175 jmax 100 jmax IKB20N60T Series G PG-TO263-3-2 Package PG-TO263-3-2 Value 600 166 -40...+175 j -55...+175 245 Rev. 2.4 Oct Unit ...
Page 2
... TrenchStop Series Symbol Conditions 6cm² Symbol Conditions . 0µ 150 IKB20N60T p Max. Value Unit 0.9 K/W 1.5 40 Value Unit min. Typ. max. 600 - - V - 1.5 2. 1.65 2.05 - 1.6 - 4.1 4.9 5.7 µ 1000 - - 100 Ω 1100 - - 120 - 183 Rev. 2.4 Oct. 07 ...
Page 3
... =175 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKB20N60T p Value Unit min. Typ. max 199 - - 0.31 - µ 711 - A/ s Value Unit min. Typ. max 223 - - 176 - ns - 1.46 - µ ...
Page 4
... Power Semiconductors ® TrenchStop 10A 1A 0.1A 10kHz 100kHz 1V Figure 2. Safe operating area = 400V 30A 25A 20A 15A 10A 5A 0A 25°C Figure 4. Collector current as a function of 4 IKB20N60T Series t p 10µs 50µs 1ms 10ms DC 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 175 =15V) GE 75° ...
Page 5
... TrenchStop 50A V GE 40A 30A 20A 10A Figure 6. Typical output characteristic 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 0° Figure 8. Typical collector-emitter 5 IKB20N60T Series =20V 15V 13V 11V COLLECTOR EMITTER VOLTAGE 175°C) j 50°C 100° JUNCTION TEMPERATURE J saturation voltage as a function of ...
Page 6
... Figure 10. Typical switching times 12Ω d(off in d( -50°C Figure 12. Gate-emitter threshold voltage as = 400V, =12Ω IKB20N60T t d(off GATE RESISTOR G function of gate resistor (inductive load 175° 400V 0/15V 20A Dynamic test circuit in Figure E) m ax. typ. 0°C 50°C 100°C 150° ...
Page 7
... Figure 14. Typical switching energy losses = 175°C, = 12Ω, G 2. 1.6m J 1.4m J 1.2m J 1.0m J 0.8m J 0.6m J 0.4m J 0.2m J 0.0m J 300V Figure 16. Typical switching energy losses = 400V, = 12Ω IKB20N60T Series *) clu rec GATE RESISTOR function of gate resistor (inductive load 175° 400V 0/15V 20A, CE ...
Page 8
... V Figure 18. Typical capacitance as a function 12µs 10µs 8µs 6µs 4µs 2µs 0µs 10V 18V Figure 20. Short circuit withstand time IKB20N60T 10V 20V 30V 40V , - COLLECTOR EMITTER VOLTAGE CE of collector-emitter voltage ( V =0V MHz) GE 11V 12V 13V 14V V ...
Page 9
... T =175°C J 0.8µC 0.6µC 0.4µC T =25°C J 0.2µC 600A/µs 1200A/µs Figure 24. Typical reverse recovery charge 9 IKB20N60T D =0.5 0 0.13483 9.207*10 0.58146 1.821*10 0.1 0.44456 1.47*10 0.33997 1.254*10 R 0.05 1 0.02 C ...
Page 10
... J -300A/µs -150A/µs 0A/µs 1200A/µs Figure 26. Typical diode peak rate of fall of 2.0V 1.5V 1.0V 0.5V 0.0V 0°C 2V Figure 28. Typical diode forward voltage IKB20N60T Series T =25° =175°C J 600A/µs 900A/µs 1200A/µs di /dt , DIODE CURRENT SLOPE F reverse recovery current as a ...
Page 11
... Power Semiconductors ® TrenchStop Series PG-TO263-3-2 11 IKB20N60T p Rev. 2.4 Oct. 07 ...
Page 12
... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit 12 IKB20N60T Rev. 2.4 Oct. 07 ...
Page 13
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® TrenchStop Series 13 IKB20N60T p Rev. 2.4 Oct. 07 ...