IKB20N60T Infineon Technologies, IKB20N60T Datasheet - Page 5

• Manufacturer Part Number: IKB20N60T
• Description: IGBT 600V 40A 166W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKB20N60T

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 166W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 166W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
3 5 A
3 0 A
2 5 A
2 0 A
1 5 A
1 0 A
50A
40A
30A
20A
10A
5 A
0 A
0A
0 V
0V
V
CE
V
V
,
( T
(V
G E
COLLECTOR
GE
2 V
j
=20V
CE
11V
13V
15V
= 25°C)
,
9V
7V
=10V)
GATE-EMITTER VOLTAGE
T
1V
J
= 1 7 5 °C
2 5 °C
4 V
-
EMITTER VOLTAGE
2V
6 V
8 V
3V
5
TrenchStop
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
50A
40A
30A
20A
10A
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
0A
0V
0°C
®
V
GE
V
Series
CE
=20V
11V
13V
15V
( T
saturation voltage as a function of
junction temperature
( V
T
,
7V
9V
COLLECTOR
J
j
GE
,
= 175°C)
1V
JUNCTION TEMPERATURE
= 15V)
50°C
-
2V
EMITTER VOLTAGE
IKB20N60T
100°C
Rev. 2.4 Oct. 07
3V
I
I
I
C
150°C
C
C
=20A
=10A
=40A
4V
p