IKB20N60T Infineon Technologies, IKB20N60T Datasheet - Page 3

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IKB20N60T

Manufacturer Part Number
IKB20N60T
Description
IGBT 600V 40A 166W TO263-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKB20N60T

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.05V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
166W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
IGBT
Dc Collector Current
20A
Collector Emitter Voltage Vces
2.05V
Power Dissipation Max
166W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +175°C
Transistor Case Style
TO-263
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
D2PAK (TO-263)
Vce (max)
600.0 V
Ic(max) @ 25°
30.0 A
Ic(max) @ 100°
15.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IKB20N60T
Quantity:
4 800
Part Number:
IKB20N60TAATMA1
Manufacturer:
YASKAWA
Quantity:
200
Company:
Part Number:
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Quantity:
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Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Power Semiconductors
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
b
b
t
t
t
t
E
E
E
t
Q
I
d i
t
t
t
t
E
E
E
t
Q
I
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
r r m
d ( o n )
r
d ( o f f )
f
r r
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
r r
r r
/d t
/d t
j
j
=25 C
=175 C
3
TrenchStop
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
j
j
j
j
C C
G E
R
C C
G E
R
G
G
=2 5 C ,
=2 5 C ,
F
=1 7 5 C,
=1 7 5 C
F
2 )
1 )
2 )
= 4 00 V , I
1 )
= 4 00 V , I
= 12
= 1 2
/ d t =8 8 0 A/ s
/ d t =8 8 0 A/ s
= 40 0 V, I
= 0/ 15 V ,
= 40 0 V, I
= 0/ 15 V ,
=1 3 1n H,
=1 3 1n H,
= 3 1p F
= 3 1p F
Conditions
Conditions
,
®
F
F
C
C
= 2 0 A,
= 2 0 A,
= 2 0 A,
= 2 0 A,
Series
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKB20N60T
Value
Value
Typ.
Typ.
0.31
0.46
0.77
0.31
13.3
0.51
0.64
1.15
1.46
18.9
199
711
223
176
467
18
14
42
41
18
18
76
Rev. 2.4 Oct. 07
max.
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
mJ
ns
µC
A
A/ s
Unit
ns
mJ
ns
µC
A
A/ s
p

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