IKB20N60T Infineon Technologies, IKB20N60T Datasheet - Page 10

• Manufacturer Part Number: IKB20N60T
• Description: IGBT 600V 40A 166W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKB20N60T

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 166W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 166W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 25. Typical reverse recovery current
Figure 27. Typical diode forward current as
50A
40A
30A
20A
10A
24A
20A
16A
12A
0A
8A
4A
0A
0V
600A/µs
di
as a function of diode current
slope
( V
Dynamic test circuit in Figure E)
a function of forward voltage
F
/dt ,
V
R
F
= 400V, I
,
DIODE CURRENT SLOPE
FORWARD VOLTAGE
T
J
=25°C
1V
900A/µs
175°C
F
= 20A,
T
J
=175°C
1200A/µs
2V
T
J
=25°C
10
TrenchStop
Figure 26. Typical diode peak rate of fall of
Figure 28. Typical diode forward voltage as a
2.0V
1.5V
1.0V
0.5V
0.0V
-750A/µs
-600A/µs
-450A/µs
-300A/µs
-150A/µs
0A/µs
0°C
®
Series
600A/µs
di
reverse recovery current as a
function of diode current slope
( V
Dynamic test circuit in Figure E)
function of junction temperature
T
F
J
/dt ,
R
,
=400V, I
JUNCTION TEMPERATURE
50°C
DIODE CURRENT SLOPE
900A/µs
F
=20A,
IKB20N60T
100°C
Rev. 2.4 Oct. 07
1200A/µs
T
T
J
=175°C
J
150°C
=25°C
I
F
=40A
10A
20A
p