IKB20N60T Infineon Technologies, IKB20N60T Datasheet - Page 7

• Manufacturer Part Number: IKB20N60T
• Description: IGBT 600V 40A 166W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKB20N60T

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 166W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 166W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 13. Typical switching energy losses
Figure 15. Typical switching energy losses
2.4mJ
2.0mJ
1.6mJ
1.2mJ
0.8mJ
0.4mJ
0.0mJ
1.0mJ
0.8mJ
0.6mJ
0.4mJ
0.2mJ
0.0mJ
25°C
0A
E
E
on
off
*) E
*) E
*
5A
T
due to diode recovery
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
due to diode recovery
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
50°C
J
I
CE
GE
on
on
,
C
,
JUNCTION TEMPERATURE
and E
and E
= 400V, V
= 0/15V, I
COLLECTOR CURRENT
10A 15A 20A 25A 30A 35A
E
75°C
ts
ts
on
include losses
*
include losses
C
GE
100°C 125°C 150°C
= 20A, R
= 0/15V, R
J
CE
= 175°C,
= 400V,
E
off
G
= 12Ω,
G
= 12Ω,
E
ts
*
7
TrenchStop
E
ts
*
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
2 .4m J
2 .0m J
1 .6m J
1 .2m J
0 .8m J
0 .4m J
0 .0m J
2.0m J
1.8m J
1.6m J
1.4m J
1.2m J
1.0m J
0.8m J
0.6m J
0.4m J
0.2m J
0.0m J
300V
®
V
Series
E
CE
*) E
*) E
ts
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
*
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
d u e to d io d e rec o v e ry
,
due to diode recovery
CE
350V
COLLECTOR
GE
on
on
E
= 400V, V
= 0/15V, I
a nd E
R
and E
on
G
*
,
GATE RESISTOR
400V
ts
ts
in clu d e lo ss e s
include losses
-
E
EMITTER VOLTAGE
C
GE
on
IKB20N60T
= 20A, R
450V
*
= 0/15V, I
J
J
E
= 175°C,
= 175°C,
off
Rev. 2.4 Oct. 07
500V
G
= 12Ω,
C
= 20A,
550V
E
off
E
ts
*
p