APT33GF120LRDQ2G Microsemi Power Products Group, APT33GF120LRDQ2G Datasheet - Page 5

• Manufacturer Part Number: APT33GF120LRDQ2G
• Description: IGBT 1200V 64A 357W TO264
• Manufacturer: Microsemi Power Products Group

Specifications of APT33GF120LRDQ2G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 25A
• Current - Collector (ic) (max): 64A
• Power - Max: 357W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT33GF120LRDQ2GMI; APT33GF120LRDQ2GMI

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Case temperature. (°C)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
3,000
1,000
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
500
100
V
50
10
Junction
temp. (°C)
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
(watts)
Power
-5
D = 0.9
10
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
10
0.125
0.225
30
-4
40
C
RECTANGULAR PULSE DURATION (SECONDS)
C
C
ies
oes
res
0.0138
0.148
50
10
SINGLE PULSE
-3
100
Figure 20, Operating Frequency vs Collector Current
50
10
5
0
5
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 4.3Ω
10 15
= 800V
Figure 18,Minimim Switching Safe Operating Area
-2
80
70
60
50
40
30
20
10
0
°
I
°
C
C
0
C
V
, COLLECTOR CURRENT (A)
CE
200
, COLLECTOR TO EMITTER VOLTAGE
20
25
400
Note:
30
Peak T J = P DM x Z θJC + T C
600
10
Duty Factor D =
35
-1
APT33GF120B2_LRDQ2(G)
800
t 1
40
t 2
1000 1200 1400
45 50
t 1
/
t 2
F
f
f
P
max1
max2
max
diss
1.0
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f