APT33GF120LRDQ2G Microsemi Power Products Group, APT33GF120LRDQ2G Datasheet - Page 3

• Manufacturer Part Number: APT33GF120LRDQ2G
• Description: IGBT 1200V 64A 357W TO264
• Manufacturer: Microsemi Power Products Group

Specifications of APT33GF120LRDQ2G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 25A
• Current - Collector (ic) (max): 64A
• Power - Max: 357W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT33GF120LRDQ2GMI; APT33GF120LRDQ2GMI

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
5
4
3
2
1
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
GE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
T
= 15V
J
2
, GATE-TO-EMITTER VOLTAGE (V)
T
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
1
J
= 125°C
10
T
0
T
J
4
J
= 125°C
= -55°C
T
2
T
J
25
= 25°C
J
= 25°C
6
T
12
50
3
J
= -55°C
8
75
4
10
100 125 150
14
5
J
12
= 25°C)
16
14
6
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
100
90
80
70
60
50
40
30
20
10
16
14
12
10
90
80
70
60
50
40
30
20
10
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
5
4
3
2
1
0
0
-50
V
0
0 20 40 60 80 100 120 140 160 180 200
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 25A
-25
V
25
T
GE
T
C
J
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
0
GATE CHARGE (nC)
50
5
V
15V
25
V
CE
CE
= 600V
= 240V
75
50
13V
75 100 125 150
12V
100
10
11V
V
CE
125
J
= 960V
= 125°C)
9V
8V
7V
150
15