APT33GF120LRDQ2G Microsemi Power Products Group, APT33GF120LRDQ2G Datasheet - Page 4

• Manufacturer Part Number: APT33GF120LRDQ2G
• Description: IGBT 1200V 64A 357W TO264
• Manufacturer: Microsemi Power Products Group

Specifications of APT33GF120LRDQ2G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 25A
• Current - Collector (ic) (max): 64A
• Power - Max: 357W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT33GF120LRDQ2GMI; APT33GF120LRDQ2GMI

FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
I
I
CE
CE
I
CE
R
V
T
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
= 25°C
= 4.3Ω
=
= 800V
T
R
4.3Ω, L
J
G
=
, GATE RESISTANCE (OHMS)
,
25 or 125°C,V
or 125°C
=
100
V
µ
GE
H, V
GE
= 15V
CE
=
=
15V
800V
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
I
CE
CE
I
CE
V
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
V
=
T
=
GE
J
4.3Ω
, JUNCTION TEMPERATURE (°C)
800V
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C