APT33GF120LRDQ2G Microsemi Power Products Group, APT33GF120LRDQ2G Datasheet - Page 2

• Manufacturer Part Number: APT33GF120LRDQ2G
• Description: IGBT 1200V 64A 357W TO264
• Manufacturer: Microsemi Power Products Group

Specifications of APT33GF120LRDQ2G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 25A
• Current - Collector (ic) (max): 64A
• Power - Max: 357W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT33GF120LRDQ2GMI; APT33GF120LRDQ2GMI

THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
Symbol
Symbol
SSOA
adding to the IGBT turn-on loss. (See Figure 24.)
loss. (See Figures 21, 22.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
V
t
t
t
t
R
R
C
E
E
E
E
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
on1
on2
off
Q
GEP
on1
on2
on1
on2
θ
θ
oes
t
t
t
t
res
ies
ge
off
off
gc
r
r
f
f
JC
JC
g
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
ces
includes both IGBT and FRED leakages
3
6
6
4
4
4
55
5
T
15V, L = 100µH,V
Inductive Switching (125°C)
Inductive Switching (25°C)
J
= 150°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
= 0V, V
T
V
V
V
T
V
V
V
R
R
f = 1 MHz
J
CC
CC
CE
I
I
I
J
GE
GE
GE
G
G
C
C
C
= +125°C
= +25°C
= 25A
= 25A
= 4.3Ω
= 25A
= 4.3Ω
= 600V
= 800V
= 800V
G
= 15V
= 15V
= 15V
= 4.3Ω, V
CE
CE
= 25V
= 1200V
GE
=
MIN
MIN
75
1855
1315
1930
1515
1325
3325
2145
TYP
230
110
170
100
185
110
220
135
6.10
TYP
10
19
14
17
14
17
MAX
MAX
0.61
.35
UNIT
UNIT
°C/W
nC
pF
µ
µ
gm
ns
ns
V
A
J
J