APT33GF120LRDQ2G Microsemi Power Products Group, APT33GF120LRDQ2G Datasheet

IGBT 1200V 64A 357W TO264

APT33GF120LRDQ2G

Manufacturer Part Number
APT33GF120LRDQ2G
Description
IGBT 1200V 64A 357W TO264
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT33GF120B2RDQ2G.pdf (9 pages)

Specifications of APT33GF120LRDQ2G

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 25A
Current - Collector (ic) (max)
64A
Power - Max
357W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT33GF120LRDQ2GMI
APT33GF120LRDQ2GMI
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-
taxial Diode (FRED) offers superior ruggedness and fast switching speed.
• Low Forward Voltage Drop
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Anti-parallel Diode
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
SSOA
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
FAST IGBT & FRED
1
(V
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
CE
CE
CE
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
GE
GE
J
= 25°C
= 100°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
C
APT33GF120B2RDQ2
APT33GF120B2RDQ2G* APT33GF120LRDQ2G*
GE
= 1mA, T
GE
GE
C
C
= 0V, I
= 25A, T
= 25A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 1.5mA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
All Ratings: T
2
2
1200V
C
= 25°C unless otherwise specified.
APT33GF120B2_LRDQ2(G)
1200
APT33GF120LRDQ2
MIN
4.5
2.0
APT33GF120B2_LRDQ2(G)
75A @ 1200V
-55 to 150
1200
±30
357
300
TYP
64
30
75
5.5
2.5
3.1
(B2)
T-Max
G
6000
MAX
±120
®
100
6.5
3.0
TO-264
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA
(L)

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APT33GF120LRDQ2G Summary of contents

Page 1

... Collector Cut-off Current (V I Gate-Emitter Leakage Current (V GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT33GF120B2RDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. • High Freq. Switching to 20KHz • Ultra Low Leakage Current All Ratings 25° ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Switching Safe Operating Area ...

Page 3

V = 15V T = 25° -55° 125° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output ...

Page 4

V = 15V 800V 25°C or 125° 4.3Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, Turn-On Delay Time vs Collector Current = = ...

Page 5

TYPICAL PERFORMANCE CURVES 3,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.40 0. 0.9 0.30 0.7 0.25 0.20 0.5 0.15 0.3 0.10 0.05 0.1 ...

Page 6

APT40DQ120 D.U.T. Figure 21, Inductive Switching Test Circuit 90% t d(off) 90 10% Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms and Definitions T = ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I Maximum Average Forward Current (T (AV RMS Forward Current (Square wave, 50% duty) F (RMS) Non-Repetitive Forward Surge Current (T I FSM ...

Page 8

T = 175° 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 25. Forward Current vs. Forward Voltage 5000 T = ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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