HGTG40N60B3 Fairchild Semiconductor, HGTG40N60B3 Datasheet - Page 3

• Manufacturer Part Number: HGTG40N60B3
• Description: IGBT N-CH UFS 600V 70A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG40N60B3

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 40A
• Current - Collector (ic) (max): 70A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 70A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 290W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

Electrical Specifications
NOTE:
Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 1)
Thermal Resistance Junction To Case
3. Turn-Off Energy Loss (E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
100
100
10
80
60
40
20
1
0
10
25
f
f
P
(DUTY FACTOR = 50%)
R
MAX1
MAX2
C
ØJC
= CONDUCTION DISSIPATION
PACKAGE LIMITED
PARAMETER
TEMPERATURE
EMITTER CURRENT
I
CE
= 0.43
= 0.05 / (t
= (P
, COLLECTOR TO EMITTER CURRENT (A)
50
D
o
T
- P
T
C/W, SEE NOTES
J
C
C
20
= 150
, CASE TEMPERATURE (
d(OFF)I
) / (E
OFF
o
75
ON
C, R
+ t
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
+ E
d(ON)I
G
T
OFF
= 3 , L = 100 H, V
C
= 25
)
)
100
40
o
C, Unless Otherwise Specified (Continued)
(Unless Otherwise Specified)
o
SYMBOL
V
C)
t
t
d(OFF)I
GE
E
d(ON)I
R
E
110
110
60
OFF
125
75
75
t
t
T
ON
rI
fI
JC
= 15V
CE
C
o
o
o
o
C
C
C 15V
C
CE
= 480V
80
V
15V
10V
10V
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
GE
IGBT and Diode Both at T
I
V
V
R
L = 100 H
Test Circuit (Figure 17)
150
100
CE
GE
CE
G
= 3
= I
= 0.8 BV
= 15V
C110
TEST CONDITIONS
CES
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
250
200
150
100
18
16
14
12
10
50
8
6
4
10
0
0
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
J
T
= 150
J
= 150
100
V
V
GE
CE
11
o
o
C
, COLLECTOR TO EMITTER VOLTAGE (V)
, GATE TO EMITTER VOLTAGE (V)
C, R
200
G
= 3 , V
V
CE
12
MIN
-
-
-
-
-
-
-
= 360V, R
300
GE
= 15V
13
1850
2000
TYP
285
100
G
47
35
400
-
= 3 , T
t
I
SC
SC
J
500
14
MAX
= 125
0.43
HGTG40N60B3 Rev. B3
375
175
-
-
-
-
o
C
600
15
UNITS
o
900
800
700
600
500
400
300
200
C/W
ns
ns
ns
ns
J
J
700