HGTG40N60B3 Fairchild Semiconductor, HGTG40N60B3 Datasheet - Page 2

• Manufacturer Part Number: HGTG40N60B3
• Description: IGBT N-CH UFS 600V 70A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG40N60B3

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 40A
• Current - Collector (ic) (max): 70A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 70A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 290W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
S
Electrical Specifications
©2004 Fairchild Semiconductor Corporation
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 1)
1. Pulse width limited by maximum junction temperature.
2. V
At T
At T
CE(PK)
C
C
= 25
= 110
o
= 360V, T
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
J
= 125
C
C
= 25
o
> 25
C, R
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
T
G
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
C
T
= 3
= 25
C
= 25
GE
GE
o
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
o
C, Unless Otherwise Specified
SYMBOL
V
V
Q
t
BV
BV
t
d(OFF)I
CE(SAT)
SSOA
GE(TH)
V
E
d(ON)I
I
I
E
G(ON)
GES
CES
GEP
OFF
t
t
ON
CES
ECS
rI
fI
I
I
V
V
I
V
I
V
T
R
V
L = 100 H
I
I
V
IGBT and Diode Both at T
I
V
V
R
L = 100 H
Test Circuit (Figure 17)
C
C
C
C
C
C
CE
GE
GE
J
GE
GE
CE
CE
CE
CE
G
G
= 250 A, V
= -10mA, V
= I
= 250 A, V
= I
= I
= 150
= 3
= 3
= I
= BV
= BV
= 15V
= 20V
= 15V
= 0.5 BV
= 0.8 BV
= 15V
C110
C110
C110
C110
o
TEST CONDITIONS
CES
CES
C
,
, V
,
CE
CES
CES
GE
CE
GE
= 0.5 BV
= 0V
= V
= 0V
GE
T
T
T
T
V
V
V
V
J
, T
C
C
C
C
GE
GE
CE
CE
C110
GEM
CES
= 25
= 150
= 25
= 150
GES
CES
ARV
STG
J
C25
CM
= 480V
= 600V
= 15V
= 20V
SC
SC
= 25
D
L
o
o
C
C
o
o
C
C
o
C
HGTG40N60B3
100A at 600V
-55 to 150
MIN
600
200
100
3.0
20
2.33
600
330
290
100
260
-
-
-
-
-
-
-
-
-
-
-
-
-
-
70
40
10
20
30
2
1050
TYP
250
335
170
800
1.4
1.5
4.8
7.5
47
35
50
-
-
-
-
-
-
-
MAX
1200
1400
HGTG40N60B3 Rev. B3
100
330
435
200
100
6.0
2.0
2.3
6.0
100
-
-
-
-
-
-
-
UNITS
W/
mJ
o
o
W
V
A
A
A
V
V
C
C
UNITS
o
s
s
C
mA
nC
nC
nA
ns
ns
ns
ns
V
V
V
V
V
A
A
V
A
J
J