HGTG20N60B3D Fairchild Semiconductor, HGTG20N60B3D Datasheet - Page 3

IGBT N-CH UFS 600V 20A TO-247

HGTG20N60B3D

Manufacturer Part Number
HGTG20N60B3D
Description
IGBT N-CH UFS 600V 20A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTG20N60B3D

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
165W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Type
IGBT
Dc Collector Current
40A
Collector Emitter Voltage Vces
2V
Power Dissipation Pd
165W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
TO-247
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Operating Temperature Range
-40°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGTG20N60B3D
Manufacturer:
MITSUBISHI
Quantity:
5 000
Part Number:
HGTG20N60B3D
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 3. DC COLLECTOR CURRENT vs CASE
FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER
5000
4000
3000
2000
1000
100
50
40
30
20
10
0
80
60
40
20
0
25
0
4
0
FIGURE 1. TRANSFER CHARACTERISTICS
PULSE DURATION = 250 s
DUTY CYCLE <0.5%, V
C
C
C
T
T
T
TEMPERATURE
VOLTAGE
T
IES
OES
RES
C
C
C
V
C
= 150
= -40
CE
= -40
= 25
50
V
, COLLECTOR TO EMITTER VOLTAGE (V)
T
5
GE
C
o
o
o
o
6
, CASE TEMPERATURE (
C
C
C
, GATE TO EMITTER VOLTAGE (V)
C
75
10
CE
V
GE
= 10V
8
= 15V
100
15
FREQUENCY = 1MHz
o
C)
10
125
20
150
12
25
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
100
80
60
40
20
600
480
360
240
120
100
0
80
60
40
20
0
0
0
0
0
FIGURE 2. SATURATION CHARACTERISTICS
PULSE DURATION = 250 s
DUTY CYCLE <0.5%, V
FIGURE 6. GATE CHARGE WAVEFORMS
V
V
CE
CE
V
20
GE
2
, COLLECTOR TO EMITTER VOLTAGE (V)
1
, COLLECTOR TO EMITTER VOLTAGE (V)
= 15V
Q
V
CE
G
T
V
, GATE CHARGE (nC)
C
CE
= 600V
40
= -40
= 200V
4
2
12V
GE
o
C
V
= 15V
PULSE DURATION = 250 s
DUTY CYCLE <0.5%, T
CE
T
60
= 400V
C
T
I
R
= 150
6
g(REF)
C
3
L
V
V
V
V
V
GE
GE
GE
GE
GE
= 25
= 30
V
GE
o
= 10V
= 8.5V
= 8.0V
= 7.5V
= 7.0V
C
= 1.685mA
o
80
HGTG20N60B3D Rev. B
= 9V
C
8
T
4
C
C
= 25
= 25
100
o
15
12
9
6
3
0
o
C
C
10
5

Related parts for HGTG20N60B3D