HGTG20N60B3D Fairchild Semiconductor, HGTG20N60B3D Datasheet - Page 2

• Manufacturer Part Number: HGTG20N60B3D
• Description: IGBT N-CH UFS 600V 20A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG20N60B3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 165W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Pd: 165W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -40°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector to Gate Voltage, R
Average Diode Forward Current at 110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
NOTE:
©2001 Fairchild Semiconductor Corporation
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
3. Turn-Off Energy Loss (E
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At T
at the point where the collector current equals zero (I
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
CE
C
= 110
= 360V, T
o
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
= 125
o
C
GE
C, R
OFF
C
= 25
> 25
= 1M
G
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
o
= 25
C
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
T
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= 150
T
o
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
= 25
C
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 25
GE
GE
o
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
o
SYMBOL
V
V
C, Unless Otherwise Specified
Q
t
BV
t
d(OFF)I
CE(SAT)
SSOA
GE(TH)
V
d(ON)I
E
R
I
I
E
G(ON)
V
CES
GES
GEP
OFF
t
t
t
ON
EC
CES
rI
rr
fI
JC
CE
= 0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for
I
V
I
V
I
V
T
V
R
L = 45 H
I
I
V
T
I
V
V
R
L = 100 H
I
I
I
IGBT
Diode
C
C
C
C
C
CE
EC
EC
EC
GE
GE
C
GE
C
GE
CE
G
CE
CE
G
= 250 A, V
= I
= 250 A, V
= I
= I
= 150
= 150
= 10
= 10
= I
= 20A
= 20A, dI
= 1A, dI
= BV
= 15V
= 20V
= 15V,
= 0.5 BV
= 0.8 BV
= 15V
C110
C110
C110
C110
o
o
CES
,
TEST CONDITIONS
C
C,
,
, V
EC
CE
EC
CES
CES,
GE
CE
/dt = 100A/ s
/dt = 100A/ s
= 0.5 BV
= 0V
= V
GE
T
T
T
T
V
V
V
V
C
C
C
C
GE
GE
CE
CE
J
, T
= 25
= 150
= 25
= 150
CES
(AVG)
C110
= 480V
= 600V
= 15V
= 20V
GEM
CGR
GES
CES
STG
C25
CM
SC
SC
o
o
D
L
C
C
o
o
C
C
HGTG20N60B3D
30A at 600V
-40 to 150
MIN
600
100
3.0
30
1.32
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
600
600
160
165
260
40
20
20
10
20
30
4
1050
TYP
105
220
140
475
1.8
2.1
5.0
8.0
1.5
80
25
20
-
-
-
-
-
-
-
-
-
-
HGTG20N60B3D Rev. B
MAX
0.76
250
105
135
275
175
2.0
2.0
2.5
6.0
1.9
1.2
100
55
45
-
-
-
-
-
-
-
-
UNITS
W/
o
o
W
V
V
A
A
A
A
V
V
C
C
o
s
s
UNITS
o
o
C
mA
C/W
C/W
nA
nC
nC
ns
ns
ns
ns
ns
ns
V
V
V
V
A
A
V
V
A
J
J