FGL60N100BNTD Fairchild Semiconductor, FGL60N100BNTD Datasheet - Page 7

• Manufacturer Part Number: FGL60N100BNTD
• Description: IGBT N-CH 1000V 60A TO-264
• Manufacturer: Fairchild Semiconductor

Specifications of FGL60N100BNTD

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 60A
• Current - Collector (ic) (max): 60A
• Power - Max: 180W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1000 V
• Collector-emitter Saturation Voltage: 1.5 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: +/- 500 nA
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.9V
• Power Dissipation Pd: 180W
• Collector Emitter Voltage V(br)ceo: 1kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Channel Type: N
• Collector-emitter Voltage: 1kV
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-264
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGL60N100BNTD Rev.A2
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