FGL60N100BNTD Fairchild Semiconductor, FGL60N100BNTD Datasheet

IGBT N-CH 1000V 60A TO-264

FGL60N100BNTD

Manufacturer Part Number
FGL60N100BNTD
Description
IGBT N-CH 1000V 60A TO-264
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGL60N100BNTD

Igbt Type
NPT and Trench
Voltage - Collector Emitter Breakdown (max)
1000V
Vce(on) (max) @ Vge, Ic
2.9V @ 15V, 60A
Current - Collector (ic) (max)
60A
Power - Max
180W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Collector- Emitter Voltage Vceo Max
1000 V
Collector-emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
+/- 25 V
Continuous Collector Current At 25 C
60 A
Gate-emitter Leakage Current
+/- 500 nA
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
60 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
60A
Collector Emitter Voltage Vces
2.9V
Power Dissipation Pd
180W
Collector Emitter Voltage V(br)ceo
1kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Channel Type
N
Collector-emitter Voltage
1kV
Collector Current (dc) (max)
60A
Gate To Emitter Voltage (max)
±25V
Package Type
TO-264
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2008 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev.A2
FGL60N100BNTD
NPT-Trench IGBT
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction
and switching characteristics as well as enhanced
avalanche ruggedness. These devices are well suited for
Induction Heating ( I-H ) applications
Application
Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
V
V
I
I
I
I
P
T
T
T
R
R
R
C
CM (1)
F
FM
stg
J
L
CES
GES
D
θJC
θJC
θJA
Symbol
Symbol
(IGBT)
(DIODE)
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
C
E
Description
Parameter
TO-264
T
C
= 25°C unless otherwise noted
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
Features
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
• Built-in Fast Recovery Diode
= 25°C
= 100°C
= 100°C
= 25°C
= 100°C
G
G
FGL60N100BNTD
Typ.
--
--
--
-55 to +150
-55 to +150
1000
± 25
200
200
180
300
60
42
15
72
CE(sat)
C
C
E
E
Max.
0.69
2.08
25
= 2.5 V @ I
IGBT
www.fairchildsemi.com
C
Units
Units
°C/W
°C/W
°C/W
= 60A
°C
°C
°C
W
W
V
V
A
A
A
A
A

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FGL60N100BNTD Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case θJC R (DIODE) Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2008 Fairchild Semiconductor Corporation FGL60N100BNTD Rev.A2 Features • High Speed Switching • Low Saturation Voltage : V • High Input Impedance • Built-in Fast Recovery Diode TO-264 T = 25°C unless otherwise noted C ...

Page 2

... Fall Time f Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Instantaneous Reverse Current R FGL60N100BNTD Rev. 25°C unless otherwise noted C Test Conditions Min 0V 1mA 1000 1000V ± 25 ...

Page 3

... Collector-Emitter Voltage, V Fig 1. Typical Output Characteristics Common Emitter V =15V - Case Temperature, T Fig 3. Saturation Voltage vs. Case Temperature at Varient Current Level 30A 60A 4 80A 10A Gate-Emitter Voltage, V Fig 5. Saturation Voltage vs. V FGL60N100BNTD Rev.A2 90 20V Common Emitter V 10V 80 15V [V] CE Fig 2. Typical Saturation Voltage Characteristics 10 8 ...

Page 4

... Fig 9. Switching Characteristics vs. Collector Current I MAX. (Pulsed) C 100 I MAX. (Continuous Operation Single Nonrepetitive Pulse Curve must be darated linearly with increase in temperature 0 Collector-Emitter Voltage, V Fig 11. SOA Characteristics FGL60N100BNTD Rev.A2 10000 Cies 1000 Coes 100 Cres [V] CE Fig 8. Switching Characteristics vs. 20 Common Emitter = ...

Page 5

... I rr 0.6 0 Forward Current, I Fig 15. Reverse Recovery Characteristics vs. Forward Current 250 200 150 100 50 0 0.1 1 Reverse Voltage, V Fig 17. Junction capacitance FGL60N100BNTD Rev.A2 1.2 1.0 0.8 0 0.4 0.2 0.0 1.5 2.0 2.5 0 [V] FM Fig 14. Reverse Recovery Characteristics µ di/dt=-20A 1000 ...

Page 6

... Package Dimension 20.00 (8.30) (7.00) ±0.20 4.90 (1.50) ±0.20 2.50 5.45TYP ±0.30 [5.45 ] FGL60N100BNTD Rev.A2 TO-264 ±0.20 (8.30) (1.00) (0.50) (7.00) (1.50) ±0.20 3.00 +0.25 1.00 –0.10 5.45TYP ±0.30 [5.45 ] (2.00) (1.50) +0.25 0.60 ±0.30 2.80 –0.10 Dimensions in Millimeters www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGL60N100BNTD Rev.A2 Green FPS™ e-Series™ POWEREDGE GOT™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ Programmable Active Droop™ ISOPLANAR™ ...

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