HGTP12N60C3D Fairchild Semiconductor, HGTP12N60C3D Datasheet - Page 3

• Manufacturer Part Number: HGTP12N60C3D
• Description: IGBT SMPS N-CH 600V 24A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP12N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 24A
• Power - Max: 104W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Electrical Specifications
NOTE:
Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
Diode Reverse Recovery Time
Thermal Resistance
3. Turn-Off Energy Loss (E
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
at the point where the collector current equals zero (I
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
losses due to diode recovery.
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
4
0
FIGURE 1. TRANSFER CHARACTERISTICS
DUTY CYCLE <0.5%, V
PULSE DURATION = 250 s
T
T
T
PULSE DURATION = 250 s
DUTY CYCLE <0.5%, V
C
C
C
PARAMETER
= 150
= -40
= 25
V
CE
o
o
V
o
6
C
C
, COLLECTOR TO EMITTER VOLTAGE (V)
GE
C
1
, GATE TO EMITTER VOLTAGE (V)
OFF
T
8
C
CE
2
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending
= -40
GE
= 10V
T
C
= 10V
o
= 25
C
10
3
o
SYMBOL
C, Unless Otherwise Specified (Continued)
R
t
rr
JC
12
T
T
C
4
C
= 25
= 150
I
I
IGBT
Diode
CE
EC
EC
o
= 0A). This family of devices was tested per JEDEC Standard No. 24-1 Method for
= 12A, dI
= 1.0A, dI
C
o
C
14
5
TEST CONDITIONS
EC
EC
/dt = 200A/ s
/dt = 200A/ s
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
0
FIGURE 2. SATURATION CHARACTERISTICS
PULSE DURATION = 250 s, DUTY CYCLE <0.5%, T
0
PULSE DURATION = 250 s
DUTY CYCLE <0.5%, V
V
V
CE
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
2
, COLLECTOR TO EMITTER VOLTAGE (V)
1
V
GE
= 15.0V
MIN
-
-
-
-
4
2
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
GE
= 15V
T
C
TYP
= -40
32
23
-
-
6
3
o
C
12.0V
MAX
1.2
1.9
40
30
T
C
8
T
4
C
= 150
7.0V
C
= 25
= 25
UNITS
10.0V
o
o
o
8.5V
8.0V
9.0V
7.5V
o
C/W
C/W
C
ns
ns
C
o
C
10
5