HGTP12N60C3D Fairchild Semiconductor, HGTP12N60C3D Datasheet
HGTP12N60C3D
Specifications of HGTP12N60C3D
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HGTP12N60C3D Summary of contents
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... Packaging COLLECTOR (FLANGE) BRAND 12N60C3D 12N60C3D 4,443,931 4,466,176 4,631,564 4,639,754 4,717,679 4,743,952 4,810,665 4,823,176 4,904,609 4,933,740 150 210ns J JEDEC TO-220AB JEDEC TO-263A B COLLECTOR (FLANGE 4,516,143 4,532,534 4,587,713 4,639,762 4,641,162 4,644,637 4,783,690 4,794,432 4,801,986 4,837,606 4,860,080 4,883,767 4,963,951 4,969,027 HGTP12N60C3D, HGT1S12N60C3DS Rev. B ...
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... J STG 260 MIN TYP 600 - 150 1. 150 150 C - 2.0 C 3.0 5 480V 80 - CE(PK 600V 24 - CE(PK 15V - 20V - 270 - 210 - 380 - 900 - 1.7 HGTP12N60C3D, HGT1S12N60C3DS Rev. B UNITS MAX UNITS - V 250 A 2.0 mA 2.0 V 2.2 V 2.2 V 2.4 V 6.0 V 100 400 ns 275 2.1 V ...
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... PULSE DURATION = 250 s, DUTY CYCLE <0.5 15.0V GE 12. COLLECTOR TO EMITTER VOLTAGE (V) CE FIGURE 2. SATURATION CHARACTERISTICS 80 PULSE DURATION = 250 s DUTY CYCLE <0.5 15V - COLLECTOR TO EMITTER VOLTAGE (V) CE HGTP12N60C3D, HGT1S12N60C3DS Rev. B MAX UNITS 1.2 C/W o 1.9 C 10.0V 9.0V 8.5V 8.0V 7.5V 7. 150 ...
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... FIGURE 6. SHORT CIRCUIT WITHSTAND TIME 400 150 100 CE(PK) 300 V = 10V GE 200 100 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 300 150 100 CE(PK) 200 V = 10V OR 15V GE 100 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT HGTP12N60C3D, HGT1S12N60C3DS Rev. B 140 120 100 480V V = 15V 480V 25 30 ...
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... EMITTER CURRENT 100 150 15V 100 LIMITED BY CIRCUIT 100 200 300 400 V , COLLECTOR TO EMITTER VOLTAGE (V) CE(PK) FIGURE 14. SWITCHING SAFE OPERATING AREA REF = 1.276mA 600V 400V 200V GATE CHARGE (nC) g FIGURE 16. GATE CHARGE WAVEFORMS HGTP12N60C3D, HGT1S12N60C3DS Rev 480V 25 30 500 600 50 60 ...
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... FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation (Continued) DUTY FACTOR PEAK RECTANGULAR PULSE DURATION ( 2.0 2.5 3.0 FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT HGTP12N60C3D 480V /dt = 200A/ FORWARD CURRENT (A) EC 90% 10 OFF ON 90% 10% t d(OFF d(ON)I FIGURE 21. SWITCHING TEST WAVEFORMS HGTP12N60C3D, HGT1S12N60C3DS Rev ...
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... E MAX2 D C OFF ) is defined 50% duty factor was used (Figure 13) and the D ) are approximated )/2. CE are defined in the switching waveforms OFF is the integral of the instantaneous during turn-on and OFF = 0). CE HGTP12N60C3D, HGT1S12N60C3DS Rev MAX1 ). D(ON D(OFF)I ). The )/ the ; i.e., the OFF ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...