HGT1S10N120BNST Fairchild Semiconductor, HGT1S10N120BNST Datasheet - Page 8
HGT1S10N120BNST
Manufacturer Part Number
HGT1S10N120BNST
Description
IGBT NPT N-CHAN 1200V TO-263AB
Manufacturer
Fairchild Semiconductor
Datasheet
1.HGT1S10N120BNST.pdf
(8 pages)
Specifications of HGT1S10N120BNST
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 10A
Current - Collector (ic) (max)
35A
Power - Max
298W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Rohs Compliant
Yes
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
35A
Gate To Emitter Voltage (max)
±20V
Package Type
D2PAK
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
HGT1S10N120BNST
HGT1S10N120BNSTTR
HGT1S10N120BNSTTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGT1S10N120BNST
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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CROSSVOLT
2
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TM
2
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