HGT1S10N120BNST Fairchild Semiconductor, HGT1S10N120BNST Datasheet - Page 6

• Manufacturer Part Number: HGT1S10N120BNST
• Description: IGBT NPT N-CHAN 1200V TO-263AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1S10N120BNST

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 35A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Rohs Compliant: Yes
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 35A
• Gate To Emitter Voltage (max): ±20V
• Package Type: D2PAK
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: HGT1S10N120BNST; HGT1S10N120BNSTTR

Typical Performance Curves
Test Circuit and Waveforms
©2002 Fairchild Semiconductor Corporation
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
4
3
2
1
0
10
10
10
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
0
-1
-2
C
0
FREQUENCY = 1MHz
10
RES
-5
R
0.05
0.02
0.01
G
0.5
0.2
0.1
V
VOLTAGE
= 10
CE
5
, COLLECTOR TO EMITTER VOLTAGE (V)
C
SINGLE PULSE
IES
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
C
OES
10
-4
L = 2mH
15
HGTG10N120BND
+
-
Unless Otherwise Specified (Continued)
V
20
DD
= 960V
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
25
DUTY FACTOR, D = t
PEAK T
V
V
I
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
CE
GE
CE
15
12
9
6
3
0
J
0
= (P
10
FIGURE 19. SWITCHING TEST WAVEFORMS
DUTY CYCLE <0.5%, T
PULSE DURATION = 250 s
-2
D
X Z
V
t
CE
d(OFF)I
JC
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
90%
1
, COLLECTOR TO EMITTER VOLTAGE (V)
/ t
X R
10%
2
1
JC
t
fI
) + T
C
C
E
= 110
OFF
90%
P
10
D
2
-1
o
C
V
GE
E
ON2
= 15V
10%
t
d(ON)I
t
1
t
3
t
2
rI
V
GE
= 10V
10
4
0