FGA15N120FTDTU Fairchild Semiconductor, FGA15N120FTDTU Datasheet - Page 4

• Manufacturer Part Number: FGA15N120FTDTU
• Description: IGBT 1200V 15A TO-3PN
• Manufacturer: Fairchild Semiconductor

Specifications of FGA15N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA15N120FTD Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
120
100
2.8
2.4
2.0
1.6
1.2
80
60
40
20
90
60
30
0
0
25
0
0
T
Common Emitter
V
T
T
Common Emitter
V
C
Temperature at Variant Current Level
Collector-EmitterCase Temperature, T
GE
C
C
GE
Characteristics
= 25
= 25
= 125
= 15V
= 15V
o
2
Collector-Emitter Voltage, V
1
Collector-Emitter Voltage, V
o
C
50
C
o
C
2
4
15V
75
17V
20V
3
6
100
I
C
8
4
= 10A
V
30A
15A
GE
10V
12V
CE
CE
125
= 8V
[V]
[V]
10
5
C
[
o
C
]
150
12
6
4
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
120
100
20
16
12
90
60
30
80
60
40
20
0
8
4
0
0
0
0
2
T
Common Emitter
V
T
T
C
CE
C
C
= 125
= 25
= 125
= 20V
2
Collector-Emitter Voltage, V
o
4
C
o
o
4
C
C
Gate-Emitter Voltage, V
Gate-Emitter Voltage,V
I
C
= 10A
15A
6
4
8
15V
6
8
17V
30A
12
20V
10
Common Emitter
T
8
C
V
GE
GE
12V
10V
GE
= 25
CE
[V]
[V]
= 8V
16
o
[V]
C
10
12
GE
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