FGA15N120FTDTU Fairchild Semiconductor, FGA15N120FTDTU Datasheet - Page 3

• Manufacturer Part Number: FGA15N120FTDTU
• Description: IGBT 1200V 15A TO-3PN
• Manufacturer: Fairchild Semiconductor

Specifications of FGA15N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA15N120FTD Rev. A
Electrical Characteristics of the Diode
V
t
I
Q
Symbol
rr
rr
FM
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Cyrrent
Diode Reverse Recovery Charge
Parameter
I
I
dI/dt = 200A/µs
F
ES
= 15A
=15A,
Test Conditions
T
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25
= 125
= 25
= 125
= 25
= 125
= 25
= 125
o
o
o
o
C
C
C
C
o
o
o
o
C
C
C
C
Min.
-
-
-
-
-
-
-
-
Typ.
1.42
10.7
575
577
1.4
8.7
30
37
Max
1.8
-
-
-
-
-
-
-
www.fairchildsemi.com
Units
µC
ns
V
A