FGH20N60UFDTU Fairchild Semiconductor, FGH20N60UFDTU Datasheet - Page 7

• Manufacturer Part Number: FGH20N60UFDTU
• Description: IGBT 600V 40A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH20N60UFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 165W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH20N60UFD Rev. A1
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 21. Stored Charge
0.05
0.04
0.03
0.02
0.01
0.1
40
10
1
0
0
T
J
= 75
o
C
1
5
Forward Current, I
Forward Voltage, V
T
J
200A/
= 125
1E-3
0.01
0.1
m
o
s
1
1E-5
C
T
J
10
2
= 25
single pulse
0.02
0.01
0.05
0.5
0.2
0.1
di/dt = 100A/
o
C
F
F
[A]
Figure 23.Transient Thermal Impedance of IGBT
T
T
T
[V]
C
C
C
15
3
= 25
= 75
= 125
1E-4
m
o
o
s
C
C
o
C
Rectangular Pulse Duration [sec]
4
20
1E-3
7
1E-3
0.01
100
0.1
60
50
40
30
20
10
Figure 20. Reverse Current
10
1
Figure 22. Reverse Recovery Time
0
0
0.01
100
Peak T
Duty Factor, D = t1/t2
di/dt = 100A/
5
Forward Current, I
Reverse Voltage, V
P
DM
200
j
= Pdm x Zthjc + T
0.1
t
1
t
m
T
2
T
300
s
10
C
T
C
C
= 125
= 75
= 25
200A/
o
o
C
o
F
C
C
R
400
[A]
C
m
[V]
s
1
15
500
www.fairchildsemi.com
600
20