FGH20N60UFDTU Fairchild Semiconductor, FGH20N60UFDTU Datasheet - Page 4

• Manufacturer Part Number: FGH20N60UFDTU
• Description: IGBT 600V 40A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH20N60UFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 165W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH20N60UFD Rev. A1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
3.2
2.8
2.4
2.0
1.6
1.2
0.8
60
40
20
60
40
20
0
0
0.0
25
0
T
Common Emitter
V
T
T
Common Emitter
V
C
GE
C
C
Collector-EmitterCase Temperature, T
GE
= 25
Characteristics
Temperature at Variant Current Level
= 25
= 125
= 15V
= 15V
o
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
o
C
C
o
C
1.5
50
1
15V
20V
3.0
75
2
12V
V
10V
GE
I
C
40A
20A
4.5
= 10A
100
= 8V
CE
CE
3
[V]
[V]
C
[
o
C]
6.0
125
4
4
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
60
40
20
60
40
20
20
16
12
0
0
8
4
0
0.0
4
0
T
Common Emitter
V
T
T
C
C
C
CE
= 125
= 25
= 125
= 20V
o
Collector-Emitter Voltage, V
o
C
o
C
4
C
Gate-Emitter Voltage, V
Gate-Emitter Voltage,V
20A
1.5
I
6
C
= 10A
15V
8
20V
3.0
8
40A
12
12V
Common Emitter
T
V
C
GE
GE
= -40
GE
4.5
10
CE
= 8V
[V]
[V]
o
16
10V
[V]
C
GE
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6.0
12
20