FGH30N60LSDTU Fairchild Semiconductor, FGH30N60LSDTU Datasheet - Page 7

• Manufacturer Part Number: FGH30N60LSDTU
• Description: IGBT SWITCHING 600V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH30N60LSDTU

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.4V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 480W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

FGH30N60LSD Rev. A2
Figure 20. Typical Forward Voltage Drop
Figure 22. Typical Reverse Recovery Time
100
200
190
180
170
160
150
140
130
120
110
100
0.1
10
90
80
70
60
50
40
30
20
10
1
0
0.0
100
0.4
T
C
T
=125
C
0.8
= 25
T
C
o
1E-3
FORWARD VOLTAGE, V
=25
0.01
C
o
0.1
C
o
1
1E-5
T
C
1.2
C
=75
0.05
0.02
T
200
0.5
0.2
di/dt [A/
0.1
o
0.01
C
C
Figure 19. Transient Thermal Impedance of IGBT
1.6
= 75
o
C
single pulse
T
µ
C
s]
2.0
= 125
1E-4
o
F
300
C
2.4
[V]
2.8
400
I
1E-3
Rectangular Pulse Duration [sec]
F
= 15A
3.2
500
7
Figure 21. Typical Reverse Current
0.01
1E-4
1E-5
1E-6
1E-7
1E-8
1E-9
0
0.1
100
Duty Factor, D = t1/t2
Peak T
T
P
C
DM
= 125
REVERSE VOLTAGE, V
200
j
o
= Pdm x Zthjc + T
C
t
1
1
t
2
T
C
300
= 25
T
C
= 75
o
C
o
C
C
10
400
R
[V]
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500
600