FGH30N60LSDTU Fairchild Semiconductor, FGH30N60LSDTU Datasheet - Page 5

• Manufacturer Part Number: FGH30N60LSDTU
• Description: IGBT SWITCHING 600V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH30N60LSDTU

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.4V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 480W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

FGH30N60LSD Rev. A2
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. Vge
Figure 9. Gate Charge Characteristics
Figure 11. Load Current Vs. Frequency
20
16
12
15
12
80
70
60
50
40
30
20
10
8
4
0
9
6
3
0
0
0.1
0
0
Common Emitter
I
T
C
C
Duty cycle : 50%
T
Powe Dissipation = 192W
= 30A
= 25
c
= 100
o
C
50
4
Gate-Emitter Voltage, V
I
o
C
C
= 15A
1
Gate Charge, Q
V
load Current : peak of square wave
cc
Frequency [kHz]
100
= 400V
8
V
cc
10
= 100V
30A 60A
150
12
g
[nC]
Common Emitter
T
C
200V
GE
= 125
100
[V]
300V
200
16
o
C
1000
250
20
(Continued)
5
Figure 12. Turn-On Characteristics vs.
Figure 8. Capacitance characteristics
Figure 10. SOA Characteeristics
13000
10000
1000
200
100
100
10
50
100
300
0.1
10
0
0
1
0.1
I
c
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
I
c
MAX (Continuous)
MAX (Pulsed)
t
t
Collector-Emitter Voltage, V
Gate Resistance
d(on)
r
5
Collector-Emitter Voltage, V
10
C
= 25
1
Gate Resistance, R
C
C
C
res
ies
oes
10
o
C
20
10
15
Common Emitter
V
I
T
T
C
CC
C
C
30
DC Operation
= 30A
Common Emitter
V
T
= 25
= 125
GE
C
= 400V, V
20
G
= 25
100
= 0V, f = 1MHz
o
[ Ω ]
CE
C
o
C
o
[V]
C
CE
40
GE
25
[V]
= 15V
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1000
100
1ms
50
µ
µ
30
s
s
50