FGA20N120FTDTU Fairchild Semiconductor, FGA20N120FTDTU Datasheet - Page 6

• Manufacturer Part Number: FGA20N120FTDTU
• Description: IGBT TRENCH 20A 1200V TO-3PN
• Manufacturer: Fairchild Semiconductor

Specifications of FGA20N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA20N120FTD Rev. A
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Figure 15. Switching Loss vs. Gate Resistance
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
100
500
10
10
0.3
80
1
4
1
10
1
0
Common Emitter
V
T
T
Common Emitter
V
I
T
T
Safe Operating Area
V
C
C
C
GE
CC
C
C
GE
= 20A
= 25
= 125
= 25
= 125
Collector Current
= 15V, R
= 600V, V
= 15V, T
Collector-Emitter Voltage, V
o
o
20
C
o
C
o
C
C
20
Collector Current, I
Gate Resistance, R
G
C
10
GE
= 10
= 125
= 15V
Ω
40
o
C
30
100
60
C
G
[A]
[ Ω ]
40
CE
E
80
E
[V]
off
on
t
d(on)
1000
t
r
100
50
2000
6
Figure 16. Switching Loss vs. Collector Current
Figure 14. Turn-off Characteristics vs.
1000
0.1
0.1
10
10
30
100
10
1
1
0.0
10
10
Common Emitter
V
T
T
Common Emitter
V
T
T
C
C
GE
C
C
GE
= 25
= 125
= 25
= 125
= 15V, R
= 15V, R
o
o
C
o
C
o
C
0.5
C
20
Collector Current, I
20
Forward Voltage, V
G
Collector Current
Collector Current, I
T
G
= 10
J
= 10
= 125
Ω
Ω
o
C
1.0
30
30
T
J
C
= 25
F
[A]
C
[V]
T
T
[A]
C
C
1.5
40
o
40
C
= 125
= 25
t
E
E
d(off)
t
off
on
f
o
o
C
C
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2.0
50
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