FGA20N120FTDTU Fairchild Semiconductor, FGA20N120FTDTU Datasheet - Page 3

• Manufacturer Part Number: FGA20N120FTDTU
• Description: IGBT TRENCH 20A 1200V TO-3PN
• Manufacturer: Fairchild Semiconductor

Specifications of FGA20N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA20N120FTD Rev. A
Electrical Characteristics of the Diode
V
t
I
Q
Symbol
rr
rr
FM
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Parameter
I
I
dI/dt = 200A/µs
F
ES
= 20A
=20A,
Test Conditions
T
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25
= 125
= 25
= 125
= 25
= 125
= 25
= 125
o
o
o
o
C
C
C
C
o
o
o
o
C
C
C
C
Min.
-
-
-
-
-
-
-
-
Typ.
10.8
447
485
1.3
1.3
48
50
12
Max
1.7
-
-
-
-
-
-
-
www.fairchildsemi.com
Units
µC
ns
V
A