BAS45AL,115 NXP Semiconductors, BAS45AL,115 Datasheet - Page 7

DIODE LOW LEAK 125V 250MA SOD80C

BAS45AL,115

Manufacturer Part Number
BAS45AL,115
Description
DIODE LOW LEAK 125V 250MA SOD80C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS45AL,115

Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Mounting Type
Surface Mount
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
1.5µs
Current - Reverse Leakage @ Vr
1nA @ 125V
Voltage - Forward (vf) (max) @ If
1V @ 100mA
Voltage - Dc Reverse (vr) (max)
125V
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Current - Average Rectified (io)
250mA (DC)
Product
Switching Diodes
Peak Reverse Voltage
125 V
Forward Continuous Current
625 mA
Max Surge Current
4 A
Configuration
Single
Recovery Time
1500 ns
Forward Voltage Drop
80 mV
Maximum Reverse Leakage Current
0.001 uA
Maximum Power Dissipation
400 mW
Operating Temperature Range
+ 175 C
Maximum Diode Capacitance
4 pF
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934031250115::BAS45AL T/R::BAS45AL T/R
NXP Semiconductors
11. Soldering
BAS45AL
Product data sheet
Fig 8.
Fig 9.
2.90
Reflow soldering footprint SOD80C
1.70
Wave soldering footprint SOD80C
2.25
1.70
All information provided in this document is subject to legal disclaimers.
1.60
Rev. 5 — 6 August 2010
0.90
(2x)
6.30
4.90
2.70
1.90
4.55
4.30
2.30
sod080c
sod080c
Dimensions in mm
BAS45AL
Low-leakage diode
solder lands
solder resist
occupied area
Dimensions in mm
solder paste
© NXP B.V. 2010. All rights reserved.
solder lands
solder resist
occupied area
tracks
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