BAS45AL,115 NXP Semiconductors, BAS45AL,115 Datasheet - Page 3

• Manufacturer Part Number: BAS45AL,115
• Description: DIODE LOW LEAK 125V 250MA SOD80C
• Manufacturer: NXP Semiconductors

Specifications of BAS45AL,115

• Package / Case: LL-34, LLDS, MiniMELF, SOD80C
• Mounting Type: Surface Mount
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 1nA @ 125V
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 125V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Current - Average Rectified (io): 250mA (DC)
• Product: Switching Diodes
• Peak Reverse Voltage: 125 V
• Forward Continuous Current: 625 mA
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 1500 ns
• Forward Voltage Drop: 80 mV
• Maximum Reverse Leakage Current: 0.001 uA
• Maximum Power Dissipation: 400 mW
• Operating Temperature Range: + 175 C
• Maximum Diode Capacitance: 4 pF
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934031250115::BAS45AL T/R::BAS45AL T/R

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAS45AL
Product data sheet
Table 6.
[1]
Table 7.
T
[1]
Symbol
R
R
Symbol
V
I
C
t
R
rr
j
F
th(j-t)
th(j-a)
d
= 25
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
When switched from I
°
C unless otherwise specified.
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to tie-point
thermal resistance from
junction to ambient
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
All information provided in this document is subject to legal disclaimers.
F
= 10 mA to I
Rev. 5 — 6 August 2010
R
Conditions
I
I
I
E
V
F
F
F
= 10 mA; R
max
R
= 1 mA
= 10 mA
= 100 mA
V
V
V
V
= 0 V; f = 1 MHz
R
R
R
R
= 100 lx
= 125 V
= 30 V; T
= 125 V; T
= 125 V; T
Conditions
in free air
L
= 100 Ω; measured at I
j
= 125 °C
j
j
= 125 °C
= 150 °C
[1]
[1]
Min
-
-
Min
-
-
-
-
-
-
-
-
-
R
= 1 mA.
BAS45AL
Low-leakage diode
Typ
-
-
Typ
-
-
-
-
-
-
-
-
1.5
© NXP B.V. 2010. All rights reserved.
Max
300
375
Max
780
860
1000
1
300
500
2
4
-
Unit
K/W
K/W
Unit
mV
mV
mV
nA
nA
nA
μA
pF
μs
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