BAS45A,113 NXP Semiconductors, BAS45A,113 Datasheet

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BAS45A,113

Manufacturer Part Number
BAS45A,113
Description
Diodes (General Purpose, Power, Switching) DIODE LOW LEAKAGE
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS45A,113

Product
Switching Diodes
Peak Reverse Voltage
125 V
Forward Continuous Current
0.25 A
Max Surge Current
4 A
Configuration
Single
Recovery Time
1500 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.001 uA
Operating Temperature Range
+ 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
SOD-68
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934031240113 BAS45A T/R
Product data sheet
Supersedes data of June 1994
dbook, halfpage
DATA SHEET
BAS45A
Low-leakage diode
M3D050
DISCRETE SEMICONDUCTORS
1996 Mar 13

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BAS45A,113 Summary of contents

Page 1

DATA SHEET dbook, halfpage M3D050 BAS45A Low-leakage diode Product data sheet Supersedes data of June 1994 DISCRETE SEMICONDUCTORS 1996 Mar 13 ...

Page 2

... NXP Semiconductors Low-leakage diode FEATURES • Continuous reverse voltage: max. 125 V • Repetitive peak forward current: max. 625 mA • Low reverse current: max • Switching time: typ. 1.5 μs. APPLICATION • Low leakage current applications. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ...

Page 3

... NXP Semiconductors Low-leakage diode ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER V forward voltage F I reverse current R C diode capacitance d t reverse recovery time rr THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to tie-point th j-tp R thermal resistance from junction to ambient th j-a Note 1 ...

Page 4

... NXP Semiconductors Low-leakage diode GRAPHICAL DATA 300 handbook, halfpage I F (mA) 200 100 0 0 100 Device mounted on a printed-circuit board without metallization pad. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature handbook, full pagewidth I FSM ( − °C prior to surge. Based on square wave currents;T j Fig ...

Page 5

... NXP Semiconductors Low-leakage diode 4 10 handbook, halfpage I R (nA 125 V. R Fig.5 Reverse current as a function of junction temperature. handbook, full pagewidth D.U. Ω Fig.7 Reverse recovery time test circuit and waveforms. 1996 Mar 13 MBD456 handbook, halfpage max typ 100 150 MHz; T Fig.6 ...

Page 6

... NXP Semiconductors Low-leakage diode PACKAGE OUTLINE handbook, full pagewidth 1.6 max Dimensions in mm. The black marking band indicates the cathode. 1996 Mar 13 3.04 25.4 min 25.4 min max Fig.8 SOD68 (DO-34). 6 Product data sheet BAS45A 0.55 max MSA212 - 1 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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