BAS45AL,115 NXP Semiconductors, BAS45AL,115 Datasheet - Page 4

DIODE LOW LEAK 125V 250MA SOD80C

BAS45AL,115

Manufacturer Part Number
BAS45AL,115
Description
DIODE LOW LEAK 125V 250MA SOD80C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS45AL,115

Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Mounting Type
Surface Mount
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
1.5µs
Current - Reverse Leakage @ Vr
1nA @ 125V
Voltage - Forward (vf) (max) @ If
1V @ 100mA
Voltage - Dc Reverse (vr) (max)
125V
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Current - Average Rectified (io)
250mA (DC)
Product
Switching Diodes
Peak Reverse Voltage
125 V
Forward Continuous Current
625 mA
Max Surge Current
4 A
Configuration
Single
Recovery Time
1500 ns
Forward Voltage Drop
80 mV
Maximum Reverse Leakage Current
0.001 uA
Maximum Power Dissipation
400 mW
Operating Temperature Range
+ 175 C
Maximum Diode Capacitance
4 pF
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934031250115::BAS45AL T/R::BAS45AL T/R
NXP Semiconductors
BAS45AL
Product data sheet
Fig 1.
Fig 3.
(mA)
I
300
F
200
100
0
0
FR4 PCB, standard footprint
Forward current as a function of ambient
temperature; derating curve
Based on square wave currents.
T
Non-repetitive peak forward current as a function of pulse duration; maximum values
j
= 25 °C prior to surge
100
I
FSM
(A)
T
10
amb
10
10
−1
1
2
1
(°C)
All information provided in this document is subject to legal disclaimers.
mbg522
200
Rev. 5 — 6 August 2010
10
10
2
Fig 2.
(mA)
(1) T
(2) T
(3) T
I
300
200
100
F
10
0
0
Forward current as a function of forward
voltage
3
j
j
j
= 150 °C; typical values
= 25 °C; typical values
= 25 °C; maximum values
t
p
(μs)
mbg704
10
4
0.5
(1)
1.0
(2)
BAS45AL
Low-leakage diode
© NXP B.V. 2010. All rights reserved.
(3)
V
F
(V)
mbg523
1.5
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