BAS45AL,115 NXP Semiconductors, BAS45AL,115 Datasheet - Page 5

• Manufacturer Part Number: BAS45AL,115
• Description: DIODE LOW LEAK 125V 250MA SOD80C
• Manufacturer: NXP Semiconductors

Specifications of BAS45AL,115

• Package / Case: LL-34, LLDS, MiniMELF, SOD80C
• Mounting Type: Surface Mount
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 1nA @ 125V
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 125V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Current - Average Rectified (io): 250mA (DC)
• Product: Switching Diodes
• Peak Reverse Voltage: 125 V
• Forward Continuous Current: 625 mA
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 1500 ns
• Forward Voltage Drop: 80 mV
• Maximum Reverse Leakage Current: 0.001 uA
• Maximum Power Dissipation: 400 mW
• Operating Temperature Range: + 175 C
• Maximum Diode Capacitance: 4 pF
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934031250115::BAS45AL T/R::BAS45AL T/R

NXP Semiconductors
8. Test information
BAS45AL
Product data sheet
Fig 4.
Fig 6.
(nA)
I
10
V = V
R
10
10
10
10
−1
R
1
4
3
2
S
V
Reverse current as a function of junction
temperature
0
Reverse recovery time test circuit and waveforms
R
= 50
R
+ I
= 125 V
F
Ω
×
R
S
50
I
F
D.U.T.
max
100
typ
T
All information provided in this document is subject to legal disclaimers.
OSCILLOSCOPE
j
(°C)
mga881
SAMPLING
R
mbd456
i
= 50
150
Rev. 5 — 6 August 2010
Ω
V
R
Fig 5.
t
10 %
r
(pF)
C
90 %
d
3
2
1
0
input signal
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
t
p
5
j
= 25 °C
t
10
+ I
F
BAS45AL
output signal
Low-leakage diode
15
© NXP B.V. 2010. All rights reserved.
V
R
mbg524
(V)
t rr
20
(1)
t
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