BAS45AL NXP Semiconductors, BAS45AL Datasheet

Epitaxial medium-speed switching diode with a low leakage current in a small SOD80C glass SMD package

BAS45AL

Manufacturer Part Number
BAS45AL
Description
Epitaxial medium-speed switching diode with a low leakage current in a small SOD80C glass SMD package
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
2. Pinning information
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Epitaxial medium-speed switching diode with a low leakage current, encapsulated in a
small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
Table 1.
[1]
Table 2.
[1]
Symbol
I
V
V
Pin
1
2
F
R
F
BAS45AL
Low-leakage diode
Rev. 5 — 6 August 2010
Continuous reverse voltage: max. 125 V
Repetitive peak forward current: max. 625 mA
Low reverse current: max. 1 nA
Switching time: typ. 1.5 μs
Low leakage current applications
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
The marking band indicates the cathode.
Quick reference data
Pinning
Parameter
forward current
reverse voltage
forward voltage
cathode
anode
Description
Conditions
I
F
= 100 mA
[1]
Simplified outline
k
[1]
Min
-
-
-
a
Typ
-
-
-
Product data sheet
Graphic symbol
1
Max
250
125
1000
006aab040
V
Unit
mA
mV
2

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BAS45AL Summary of contents

Page 1

... BAS45AL Low-leakage diode Rev. 5 — 6 August 2010 1. Product profile 1.1 General description Epitaxial medium-speed switching diode with a low leakage current, encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package. 1.2 Features and benefits Continuous reverse voltage: max. 125 V Repetitive peak forward current: max. 625 mA Low reverse current: max Switching time: typ. 1.5 μ ...

Page 2

... T amb junction temperature storage temperature All information provided in this document is subject to legal disclaimers. Rev. 5 — 6 August 2010 BAS45AL Low-leakage diode Marking code marking band Min Max - 125 - 125 [1] - 250 - 625 [2] - ...

Page 3

... Min - - - = 100 lx = 125 125 ° 125 °C = 125 150 °C = 125 [ 100 Ω; measured mA BAS45AL Low-leakage diode Typ Max Unit - 300 K/W - 375 K/W Typ Max Unit - 780 mV - 860 mV - 1000 300 nA ...

Page 4

... T Fig FSM ( − All information provided in this document is subject to legal disclaimers. Rev. 5 — 6 August 2010 BAS45AL Low-leakage diode 300 F (1) (2) 200 100 0 0 0.5 1.0 = 150 °C; typical values °C; typical values °C; maximum values ...

Page 5

... Rev. 5 — 6 August 2010 (pF ° MHz Diode capacitance as a function of reverse voltage; typical values input signal BAS45AL Low-leakage diode mbg524 ( (1) output signal © NXP B.V. 2010. All rights reserved ...

Page 6

... For further information and the availability of packing methods, see BAS45AL Product data sheet 0.3 3.7 3.3 Dimensions in mm Package outline SOD80C Packing methods SOD80C 4 mm pitch tape and reel All information provided in this document is subject to legal disclaimers. Rev. 5 — 6 August 2010 BAS45AL Low-leakage diode 1.60 0.3 1.45 06-03-16 [1] Packing quantity 2500 10000 -115 -135 Section 14 ...

Page 7

... Reflow soldering footprint SOD80C 6.30 4.90 2.70 1.90 1.70 Wave soldering footprint SOD80C All information provided in this document is subject to legal disclaimers. Rev. 5 — 6 August 2010 BAS45AL Low-leakage diode solder lands solder paste solder resist occupied area Dimensions in mm sod080c solder lands solder resist occupied area ...

Page 8

... NXP Semiconductors 12. Revision history Table 9. Revision history Document ID Release date BAS45AL v.5 20100806 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 9

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 5 — 6 August 2010 BAS45AL Low-leakage diode © NXP B.V. 2010. All rights reserved ...

Page 10

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 5 — 6 August 2010 BAS45AL Low-leakage diode © NXP B.V. 2010. All rights reserved ...

Page 11

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BAS45AL Low-leakage diode All rights reserved. Date of release: 6 August 2010 Document identifier: BAS45AL ...

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