BAS45AL NXP Semiconductors, BAS45AL Datasheet
![Epitaxial medium-speed switching diode with a low leakage current in a small SOD80C glass SMD package](/photos/41/52/415243/sod080c_3d_sml.gif)
BAS45AL
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BAS45AL Summary of contents
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... BAS45AL Low-leakage diode Rev. 5 — 6 August 2010 1. Product profile 1.1 General description Epitaxial medium-speed switching diode with a low leakage current, encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package. 1.2 Features and benefits Continuous reverse voltage: max. 125 V Repetitive peak forward current: max. 625 mA Low reverse current: max Switching time: typ. 1.5 μ ...
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... T amb junction temperature storage temperature All information provided in this document is subject to legal disclaimers. Rev. 5 — 6 August 2010 BAS45AL Low-leakage diode Marking code marking band Min Max - 125 - 125 [1] - 250 - 625 [2] - ...
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... Min - - - = 100 lx = 125 125 ° 125 °C = 125 150 °C = 125 [ 100 Ω; measured mA BAS45AL Low-leakage diode Typ Max Unit - 300 K/W - 375 K/W Typ Max Unit - 780 mV - 860 mV - 1000 300 nA ...
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... T Fig FSM ( − All information provided in this document is subject to legal disclaimers. Rev. 5 — 6 August 2010 BAS45AL Low-leakage diode 300 F (1) (2) 200 100 0 0 0.5 1.0 = 150 °C; typical values °C; typical values °C; maximum values ...
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... Rev. 5 — 6 August 2010 (pF ° MHz Diode capacitance as a function of reverse voltage; typical values input signal BAS45AL Low-leakage diode mbg524 ( (1) output signal © NXP B.V. 2010. All rights reserved ...
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... For further information and the availability of packing methods, see BAS45AL Product data sheet 0.3 3.7 3.3 Dimensions in mm Package outline SOD80C Packing methods SOD80C 4 mm pitch tape and reel All information provided in this document is subject to legal disclaimers. Rev. 5 — 6 August 2010 BAS45AL Low-leakage diode 1.60 0.3 1.45 06-03-16 [1] Packing quantity 2500 10000 -115 -135 Section 14 ...
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... Reflow soldering footprint SOD80C 6.30 4.90 2.70 1.90 1.70 Wave soldering footprint SOD80C All information provided in this document is subject to legal disclaimers. Rev. 5 — 6 August 2010 BAS45AL Low-leakage diode solder lands solder paste solder resist occupied area Dimensions in mm sod080c solder lands solder resist occupied area ...
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... NXP Semiconductors 12. Revision history Table 9. Revision history Document ID Release date BAS45AL v.5 20100806 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 5 — 6 August 2010 BAS45AL Low-leakage diode © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 5 — 6 August 2010 BAS45AL Low-leakage diode © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BAS45AL Low-leakage diode All rights reserved. Date of release: 6 August 2010 Document identifier: BAS45AL ...