BAS 16S E6327 Infineon Technologies, BAS 16S E6327 Datasheet - Page 7

• Manufacturer Part Number: BAS 16S E6327
• Description: DIODE SW GP 80V 200MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BAS 16S E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 3 Independent
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 85 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 4.5 A
• Configuration: Triple Parallel
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAS16SE6327XT; SP000010200

Forward current I
BAS16U
Permissible Puls Load R
BAS16
K/W
mA
10
10
10
10
10
250
200
175
150
125
100
75
50
25
-1
0
3
2
1
0
10
0
-7
15
10
30
-6
10
45
-5
F
60
= ƒ (T
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
-4
75
10
S
thJS
90 105 120 °C
)
-3
= ƒ (t
10
-2
p
)
T
t
s
p
S
150
10
0
7
Forward current I
BAS16W
Permissible Pulse Load
I
BAS16
Fmax
mA
300
200
150
100
10
10
10
50
/ I
0
2
1
0
10
0
FDC
-7
15
10
= ƒ (t
30
-6
10
45
p
)
-5
F
60
= ƒ (T
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
75
10
S
90 105 120 °C
)
-3
10
2009-09-28
-2
BAS16...
T
t
s
p
S
150
10
0