BAS 16S E6327 Infineon Technologies, BAS 16S E6327 Datasheet - Page 4
![DIODE SW GP 80V 200MA SOT-363](/photos/5/30/53072/448-sot-363_sml.jpg)
BAS 16S E6327
Manufacturer Part Number
BAS 16S E6327
Description
DIODE SW GP 80V 200MA SOT-363
Manufacturer
Infineon Technologies
Datasheet
1.BAS_16S_E6327.pdf
(21 pages)
Specifications of BAS 16S E6327
Package / Case
SC-70-6, SC-88, SOT-363
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
1µA @ 75V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
85 V
Forward Continuous Current
0.2 A
Max Surge Current
4.5 A
Configuration
Triple Parallel
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS16SE6327XT
SP000010200
SP000010200
Electrical Characteristics at T
Parameter
AC Characteristics
Diode capacitance
V
Reverse recovery time
I
R
Test circuit for reverse recovery time
F
R
L
= 10 mA, I
= 100 Ω
= 0 V, f = 1 MHz
R
= 10 mA, measured at I
Ι
F
D.U.T.
Oscillograph
A
= 25°C, unless otherwise specified
EHN00017
R
= 1mA ,
Pulse generator: t
Oscillograph: R = 50Ω, t
4
Symbol
C
t
rr
T
p
R
= 100ns, D = 0.05, t
min.
i
-
-
= 50Ω
r
= 0.35ns, C = 0.05pF
Values
typ.
-
-
max.
2
4
2009-09-28
BAS16...
r
= 0.6ns,
Unit
pF
ns