BAS 16S E6327 Infineon Technologies, BAS 16S E6327 Datasheet - Page 19

• Manufacturer Part Number: BAS 16S E6327
• Description: DIODE SW GP 80V 200MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BAS 16S E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 3 Independent
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 85 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 4.5 A
• Configuration: Triple Parallel
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAS16SE6327XT; SP000010200

Package Outline
Foot Print
For board assembly information please refer to Infineon website "Packages"
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
Reel ø330 mm = 50.000 Pieces/Reel (optional)
1
2
Cathode
marking
Top view
1) Dimension applies to plated terminal
Cathode
marking
Copper
0.6
Package TSLP-2-1
Solder mask
0.05 MAX.
0.76
4
0.4
+0.1
19
Stencil apertures
0.5
0.45
±0.035
0.5
BAS16-02L
Type code
Cathode marking
Laser marking
1)
Bottom view
2
1
0.6
±0.05
2009-09-28
BAS16...