BAS 16S E6327 Infineon Technologies, BAS 16S E6327 Datasheet - Page 10

DIODE SW GP 80V 200MA SOT-363

BAS 16S E6327

Manufacturer Part Number
BAS 16S E6327
Description
DIODE SW GP 80V 200MA SOT-363
Manufacturer
Infineon Technologies
Datasheet

Specifications of BAS 16S E6327

Package / Case
SC-70-6, SC-88, SOT-363
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
1µA @ 75V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
85 V
Forward Continuous Current
0.2 A
Max Surge Current
4.5 A
Configuration
Triple Parallel
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS16SE6327XT
SP000010200
Permissible Puls Load R
BAS16U
Permissible Puls Load R
BAS16W
K/W
K/W
10
10
10
10
10
10
10
10
3
2
1
0
3
2
1
0
10
10
-6
-6
10
10
-5
-5
10
10
-4
-4
10
10
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
-3
-3
thJS
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10
10
= ƒ (t
= ƒ (t
-2
-2
p
p
s
s
)
)
t
t
p
p
10
10
0
0
10
Permissible Pulse Load
I
BAS16U
Permissible Pulse Load
I
BAS16W
Fmax
Fmax
10
10
10
10
10
10
/ I
/ I
-
2
1
0
2
1
0
10
10
FDC
FDC
-6
-6
= ƒ (t
= ƒ (t
10
10
-5
-5
p
p
)
)
10
10
-4
-4
10
10
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-3
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
10
-2
-2
2009-09-28
BAS16...
s
s
t
p
t
p
10
10
0
0

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