BAS 16S E6327 Infineon Technologies, BAS 16S E6327 Datasheet - Page 5

• Manufacturer Part Number: BAS 16S E6327
• Description: DIODE SW GP 80V 200MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BAS 16S E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 3 Independent
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 85 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 4.5 A
• Configuration: Triple Parallel
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAS16SE6327XT; SP000010200

Reverse current I
V
Forward current I
T
Ι
A
F
R
= 25°C
= Parameter
150
100
mA
10
nA
10
10
10
10
50
0
5
4
3
2
1
0
0
BAS 16
25
0.5
50
R
F
= ƒ (T
= ƒ (V
75
typ
A
F
)
)
100
1.0
max
70 V
25 V
°C
EHB00023
V
V
T
F
A
150
1.5
5
Forward Voltage V
I
Forward current I
BAS16
V
F
F
= Parameter
mA
1.0
0.5
300
200
150
100
50
V
0
0
0
0
BAS 16
15
Ι
F
= 100 mA
30
0.1 mA
10 mA
1 mA
45
50
F
F
60
= ƒ (T
= ƒ (T
75
S
90 105 120 °C
A
)
)
100
2009-09-28
BAS16...
EHB00025
T
T
C
A
S
150
150