BAS 16S E6327 Infineon Technologies, BAS 16S E6327 Datasheet - Page 11

DIODE SW GP 80V 200MA SOT-363

BAS 16S E6327

Manufacturer Part Number
BAS 16S E6327
Description
DIODE SW GP 80V 200MA SOT-363
Manufacturer
Infineon Technologies
Datasheet

Specifications of BAS 16S E6327

Package / Case
SC-70-6, SC-88, SOT-363
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
1µA @ 75V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
85 V
Forward Continuous Current
0.2 A
Max Surge Current
4.5 A
Configuration
Triple Parallel
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS16SE6327XT
SP000010200
Package Outline
Foot Print
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Pin 1
marking
2.9
Pin 1 marking
Laser marking
(2.25)
6
1
1.9
Pin 1
marking
±0.2
5
2
4
3
0.95
0.35
Package SC74
(0.35)
B
+0.1
-0.05
0.95
4
3.15
0.2
0.5
M
B 6x
11
Manufacturer
2005, June
Date code (Year/Month)
BCW66H
Type code
0.2
0.15
0.2
1.15
M
+0.1
-0.06
1.1 MAX.
A
0.1 MAX.
A
2009-09-28
BAS16...

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