CP3BT10G38 National Semiconductor, CP3BT10G38 Datasheet - Page 33

• Manufacturer Part Number: CP3BT10G38
• Description: IC CPU RISC W/LLC&USB 100-LQFP
• Manufacturer: National Semiconductor

Specifications of CP3BT10G38

• Applications: Connectivity Processor
• Core Processor: CR16C
• Program Memory Type: FLASH (256 kB)
• Controller Series: CP3000
• Ram Size: 10K x 8
• Interface: Bluetooth, ACCESS.bus, Audio, UART, USB, Microwire/SPI
• Number Of I /o: 37
• Voltage - Supply: 2.25 V ~ 2.75 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *CP3BT10G38

8.3.4
A module erase operation can be used to erase an entire
main block. All sections within the block must be enabled for
writing. If a boot area is defined in the block, it cannot be
erased. The following steps are performed to erase a main
block:
8.3.5
Erasing an information block also erases the corresponding
main block. If a boot area is defined in the main block, nei-
ther block can be erased. Page erase is not supported for
information blocks. The following steps are performed to
erase an information block:
8.3.6
Writing is only allowed when global write protection is dis-
abled. Writing by the CPU is only allowed when the write en-
able bit is set for the sector which contains the word to be
written. The CPU cannot write the Boot Area. Only word-
wide write access to word-aligned addresses is supported.
The following steps are performed to write a word:
4. Write to an address within the desired page.
5. Wait until the FMBUSY bit becomes clear again.
6. Check the Erase Error (EERR) bit to confirm successful
7. Repeat steps 4 through 6 to erase additional pages.
8. Clear the PER bit.
1. Verify that the Flash Memory Busy (FMBUSY) bit is
2. Prevent accesses to the flash memory while erasing is
3. Set the Module Erase (MER) bit. The MER bit is in the
4. Write to any address within the desired main block.
5. Wait until the FMBUSY bit becomes clear again.
6. Check the Erase Error (EERR) bit to confirm successful
7. Clear the MER bit.
1. Verify that the Flash Memory Busy (FMBUSY) bit is
2. Prevent accesses to the flash memory while erasing is
3. Set the Module Erase (MER) bit. The MER bit is in the
4. Load the FMIBAR or FSMIBAR register with any ad-
5. Wait until the FMBUSY bit becomes clear again.
6. Check the Erase Error (EERR) bit to confirm successful
7. Clear the MER bit.
1. Verify that the Flash Memory Busy (FMBUSY) bit is
erase of the page. The EERR bit is in the FMSTAT or
FSMSTAT register.
clear. The FMBUSY bit is in the FMSTAT or FSMSTAT
register.
in progress.
FMCTRL or FSMCTRL register.
erase of the block. The EERR bit is in the FMSTAT or
FSMSTAT register.
clear. The FMBUSY bit is in the FMSTAT or FSMSTAT
register.
in progress.
FMCTRL or FSMCTRL register.
dress within the block, then write any data to the FMIB-
DR or FSMIBDR register.
erase of the block. The EERR bit is in the FMSTAT or
FSMSTAT register.
clear. The FMBUSY bit is in the FMSTAT or FSMSTAT
register.
Information Block Module Erase
Main Block Module Erase
Main Block Write
33
8.3.7
Writing is only allowed when global write protection is dis-
abled. Writing by the CPU is only allowed when the write en-
able bit is set for the sector which contains the word to be
written. The CPU cannot write Information Block 0. Only
word-wide write access to word-aligned addresses is sup-
ported. The following steps are performed to write a word:
10. Clear the Program Enable (PE) bit.
8.4
Two words in the information blocks are dedicated to hold
settings that affect the operation of the system: the Function
Word in Information Block 0 and the Protection Word in In-
formation Block 1.
8.4.1
The Function Word resides in the Information Block 0 at ad-
dress 07Eh. At reset, the Function Word is copied into the
FMAR0 register.
2. Prevent accesses to the flash memory while the write
3. Set the Program Enable (PE) bit. The PE bit is in the
4. Write a word to the desired word-aligned address. This
5. Wait until the FMFULL bit becomes clear.
6. Repeat steps 4 and 5 for additional words.
7. Wait until the FMBUSY bit becomes clear again.
8. Check the programming error (PERR) bit to confirm
9. Clear the Program Enable (PE) bit.
1. Verify that the Flash Memory Busy (FMBUSY) bit is
2. Prevent accesses to the flash memory while the write
3. Set the Program Enable (PE) bit. The PE bit is in the
4. Write the desired target address into the FMIBAR or
5. Write the data word into the FMIBDR or FSMIBDR reg-
6. Wait until the FMFULL bit becomes clear.
7. Repeat steps 4 through 6 for additional words.
8. Wait until the FMBUSY bit becomes clear again.
9. Check the programming error (PERR) bit to confirm
15
is in progress.
FMCTRL or FSMCTRL register.
starts a new pipelined programming sequence. The
FMBUSY bit becomes set while the write operation is in
progress. The FMFULL bit in the FMSTAT or FSMSTAT
register becomes set if a previous write operation is still
in progress.
successful programming. The PERR bit is in the FM-
STAT or FSMSTAT register.
clear. The FMBUSY bit is in the FMSTAT or FSMSTAT
register.
is in progress.
FMCTRL or FSMCTRL register.
FSMIBAR register.
ister. This starts a new pipelined programming se-
quence. The FMBUSY bit becomes set while the write
operation is in progress. The FMFULL bit in the FM-
STAT or FSMSTAT register becomes set if a previous
write operation is still in progress.
successful programming. The PERR bit is in the FM-
STAT or FSMSTAT register.
Information Block Write
INFORMATION BLOCK WORDS
Function Word
Reserved
1
www.national.com
USB_ENABLE
0