EVAL-AD5570EBZ Analog Devices Inc, EVAL-AD5570EBZ Datasheet - Page 3

• Manufacturer Part Number: EVAL-AD5570EBZ
• Description: 206-10G-01 Board I.c.
• Manufacturer: Analog Devices Inc
• Series: 0040r

Specifications of EVAL-AD5570EBZ

• Number Of Dac's: *
• Number Of Bits: 16
• Outputs And Type: 1, Single Ended
• Sampling Rate (per Second): 83k
• Data Interface: Serial
• Settling Time: 12µs
• Dac Type: *
• Voltage Supply Source: Dual ±
• Operating Temperature: -40°C ~ 85°C
• Utilized Ic / Part: AD5570
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPECIFICATIONS
V
all specifications T
Table 1.
Parameter
ACCURACY
REFERENCE INPUT
OUTPUT CHARACTERISTICS
WARMUP TIME
LOGIC INPUTS
LOGIC OUTPUTS
DD
Resolution
Monotonicity
Differential Nonlinearity (DNL)
Relative Accuracy (INL)
Positive INL Drift Over Time
Negative Full-Scale Error
Full-Scale Error
Bipolar Zero Error
Gain Error
Gain Temperature Coefficient
Reference Input Range
Input Current
Output Voltage Range
Output Voltage Settling Time
Slew Rate
Digital-to-Analog Glitch Impulse
Bandwidth
Short Circuit Current
Output Noise Voltage Density
DAC Output Impedance
Digital Feedthrough
Input Currents
V
V
C
V
Floating-State Output
INH
INL
OL
IN
= +11.4 V to +16.5 V, V
B/Y Grade
A/W Grade
A/B Grades
W/Y Grades
, Input Capacitance
, Output Low Voltage
, Input Low Voltage
, Input High Voltage
1
5
MIN
to T
4
MAX
4
SS
, unless otherwise noted.
3
= −11.4 V to −16.5 V, V
4
Min
16
16
−1
−1
−2
4
4
V
V
2
SS
SS
+ 1.4
+ 2.5
REF
Typ
±0.3
±0.4
±0.6
2.5
6.5
±0.9
±1.8
±0.9
±1.8
+0.25
5
5
12
10
6
6.5
15
20
25
85
0.35
0.5
12
3
8
= 5 V, REFGND = AGND = DGND = 0 V, R
2
Rev. C | Page 3 of 24
Max
+1
+1
+2
±7.5
±6
±7.5
±7.5
±1.5
5
7
±0.1
V
V
16
13
7
0.5
±0.1
0.8
0.4
DD
DD
− 1.4
− 2.5
Unit
Bits
Bits
LSB
LSB
LSB
ppm
ppm
mV
mV
mV
mV
ppm FSR/°C
V
V
μA
V
V
μs
μs
μs
V/μs
nV-s
kHz
mA
nV/Hz
Ω
nV-s
sec
μA
V
V
pF
V
pF
Test Conditions/Comments
See Figure 16
With ±11.4 V supplies
With ±16.5 V supplies
With ±11.4 V supplies
With ±16.5 V supplies
At 16 bits to ±0.5 LSB
To 0.0003%
512 LSB code change
Measured from 10% to 90%
±12 V supplies; 1 LSB change around
the major carry
f = 1 kHz; midscale loaded
I
SINK
= 1 mA
L
= 5 kΩ, C
L
= 200 pF to AGND;
AD5570